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Advanced Calculations for Defects in Materials: Electronic Structure Methods
Editors: Alkauskas, A.; Deak, P.; Neugebauer, J.; Pasquarello, A.; van de Walle, C. G.
Place of Publication: Weinheim, Germany
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA
Date of Publication (YYYY-MM-DD): 2011-06-18
Physical Description
(e.g. Total Number of Pages):
 384
Document Type: Book
ID: 626167.0
Advanced Calculations for Defects in Solids - Electronic Structure Methods - Preface
Editors: Alkauskas, A.; Deak, P.; Neugebauer, J.; Pasquarello, A.; van de Walle, C. G.
Title of Journal: Physica Status Solidi B
Volume: 248
Issue / Number: 1
Place of Publication: Weinheim, Germany
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA
Date of Publication (YYYY-MM-DD): 2011-01-12
Document Type: Issue
ID: 626164.0
Electrostatic interactions between charged defects in supercells
Authors: Freysoldt, C.; Neugebauer, J.; van de Walle, C. G.
Date of Publication (YYYY-MM-DD): 2011
Name of Conference/Meeting: CECAM Workshop
Title of Journal: Physica Status Solidi B
Volume (in Journal): 248
Issue / Number: 5
Start Page: 1067
End Page: 1076
Document Type: Conference-Paper
ID: 498786.0
Charged defects in the supercell approach
Authors: Freysoldt, C.; Neugebauer, J.; Van de Walle, C. G.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2010-06-16
Name of Conference/Meeting: Seminar at Duisburg University
Place of Conference/Meeting: Duisburg, Germany
Document Type: Talk at Event
ID: 491012.0
Charged defects in the supercell approach
Authors: Freysoldt, Christoph; Neugebauer, Jörg; Van de Walle, C. G.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2010-06-03
Name of Conference/Meeting: Seminar at Fritz-Haber-Institut der MPG
Place of Conference/Meeting: Berlin, Germany
Document Type: Talk at Event
ID: 491013.0
Fully ab initio supercell corrections for charged defects
Authors: Freysoldt, C.; Neugebauer, J.; Van de Walle, C. G.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2009-06-08
Name of Conference/Meeting: CECAM workshop "Which Electronic Structure Method for the Study of Defects?"
Place of Conference/Meeting: Lausanne, Switzerland
Document Type: Talk at Event
ID: 441558.0
Fully ab initio supercell corrections for charged defects
Authors: Freysoldt, C.; Neugebauer, J.; Van de Walle, C. G.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2009-03-15
Name of Conference/Meeting: APS march meeting
Place of Conference/Meeting: Pittsburgh, PA, USA
Document Type: Talk at Event
ID: 441556.0
Fully ab initio finite-size corrections for charged defect supercell calculations
Authors: Freysoldt, C.; Neugebauer, J.; Van de Walle, C. G.
Date of Publication (YYYY-MM-DD): 2009-01-05
Title of Journal: Physical Review Letters
Volume: 102
Start Page: 016402-1
End Page: 016402-4
Sequence Number of Article: 016402
Document Type: Article
ID: 378147.1
Hydrogen in Semiconductors
Authors: Van de Walle, C. G.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Annual Review of Materials Research
Volume: 36
Start Page: 179
End Page: 198
Document Type: Article
ID: 291380.0
First-principles studies of beryllium doping of GaN
Authors: Van de Walle, C. G.; Limpijumnong, S.; Neugebauer, Jörg
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Physical Review B
Volume: 63
Start Page: 245205
Document Type: Article
ID: 2518.2
 
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