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Entries: 1-10  
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Uniaxially strained silicon by wafer bonding and layer transfer.
Authors: Himcinschi, C.; Radu, I.; Muster, F.; Singh, R.; Reiche, M.; Petzold, M.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Solid State Electronics
Volume: 51
Issue / Number: 2
Start Page: 226
End Page: 230
Document Type: Article
ID: 350460.0
Compressive uniaxially strained silicon on insulator by prestrained wafer bonding and layer transfer.
Authors: Himcinschi, C.; Reiche, M.; Scholz, R.; Christiansen, S. H.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Applied Physics Letters
Volume: 90
Issue / Number: 23
Sequence Number of Article: 231909
Document Type: Article
ID: 350461.0
Strain relaxation in nanopatterned strained silicon round pillars.
Authors: Himcinschi, C.; Singh, R.; Radu, I.; Milenin, A. P.; Erfurth, W.; Reiche, M.; Gösele, U.; Christiansen, S. H.; Muster, F.; Petzold, M.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Applied Physics Letters
Volume: 90
Issue / Number: 2
Sequence Number of Article: 021902/1-3
Document Type: Article
ID: 350463.0
Strained Silicon-On-Insulator - Fabrication and characterization
Authors: Reiche, M.; Himcinschi, C.; Gösele, U.; Christiansen, S. H.; Mantl, S.; Buca, D.; Zhao, Q. T.; Feste, S.; Loo, R.; Nguyen, D.; Buchholtz, W.; Wei, A.; Horstmann, M.; Feijoo, D.; Storck, P.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: ECS Transactions
Volume: 6
Issue / Number: 4
Start Page: 339
End Page: 344
Document Type: Article
ID: 352208.0
High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications
Authors: Singh, R.; Radu, I.; Reiche, M.; Himcinschi, C.; Kuck, B.; Tillack, B.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Applied Surface Science
Volume: 253
Start Page: 3595
End Page: 3599
Document Type: Article
ID: 352265.0
Comparison of SiGe virtual substrates for the fabrication of strained
silicon-on-insulator (sSOI) using wafer bonding and layer transfer
Authors: Radu, I.; Reiche, M.; Himcinschi, C.; Singh, R.; Christiansen, S. H.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: ECS Transactions
Volume: 3
Issue / Number: 7
Start Page: 317
End Page: 324
Document Type: Article
ID: 312830.0
Growth peculiarities during vapor-liquid-solid growth of silicon
nanowhiskers by electron beam evaporation
Authors: Sivakov, V.; Andrä, G.; Himcinschi, C.; Gösele, U.; Zahn, D. R. T.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Applied Physics A
Volume: 85
Issue / Number: 3
Start Page: 311
End Page: 315
Document Type: Article
ID: 312809.0
Investigation of helium implantation induced blistering in InP
Authors: Singh, R.; Radu, I.; Scholz, R.; Himcinschi, C.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Journal of Luminescence
Volume: 121
Issue / Number: 2
Start Page: 379
End Page: 382
Document Type: Article
ID: 312811.0
Low temperature InP layer transfer onto Si by helium implantation and
direct wafer bonding
Authors: Singh, R.; Radu, I.; Scholz, R.; Himcinschi, C.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Semiconductor Science and Technology
Volume: 21
Issue / Number: 9
Start Page: 1311
End Page: 1314
Document Type: Article
ID: 312857.0
Relaxation of strain in patterned strained silicon investigated by UV
Raman spectroscopy
Authors: Himcinschi, C.; Radu, I.; Singh, R.; Erfurth, W.; Milenin, A. P.; Reiche, M.; Christiansen, S. H.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Materials Science & Engineering B
Volume: 135
Issue / Number: 3
Start Page: 184
End Page: 187
Document Type: Article
ID: 312776.0
Entries: 1-10  
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