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Entries: 1-10  
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Band parameters and strain effects in ZnO and group-III nitrides
Authors: Yan, Qimin; Rinke, Patrick; Winkelnkemper, Momme; Qteish, A.; Bimberg, D.; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2011
Title of Journal: Semiconductor Science and Technology
Volume: 26
Issue / Number: 01
Sequence Number of Article: 014037
Document Type: Article
ID: 477152.0
Role of strain in polarization switching in semipolar InGaN/GaN quantum wells
Authors: Yan, Qimin; Rinke, Patrick; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Applied Physics Letters
Volume: 97
Issue / Number: 18
Sequence Number of Article: 181102
Document Type: Article
ID: 534809.0
 
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Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
Authors: Yan, Qimin; Rinke, Patrick; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2009-09-24
Title of Journal: Applied Physics Letters
Volume: 95
Issue / Number: 12
Start Page: 121111-1
End Page: 121111-3
Document Type: Article
ID: 438106.0
 
Full text / Content available
Defect formation energies without the band-gap problem: Combining density-functional theory and the GW approach for the silicon self-interstitial
Authors: Rinke, Patrick; Janotti, Anderson; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2009-01-14
Title of Journal: Physical Review Letters
Volume: 102
Issue / Number: 2
Start Page: 026402-1
End Page: 026402-4
Document Type: Article
ID: 395829.0
 
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Sources of electrical conductivity in SnO2
Authors: Singh, Abhishek Kumar; Janotti, Anderson; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2008-07-31
Title of Journal: Physical Review Letters
Volume: 101
Issue / Number: 5
Start Page: 055502-1
End Page: 055502-4
Document Type: Article
ID: 366407.0
 
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Universal alignment of hydrogen levels in semiconductors, insulators, and solutions
Authors: Van de Walle, Chris G.; Neugebauer, Jörg
Date of Publication (YYYY-MM-DD): 2003-06-05
Title of Journal: Nature
Volume: 423
Start Page: 626
End Page: 628
Document Type: Article
ID: 20097.0
Structure and energetics of nitride surfaces under MOCVD growth conditions
Authors: Van de Walle, Chris G.; Neugebauer, Jörg
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Journal of Crystal Growth
Volume: 248
Start Page: 8
End Page: 13
Document Type: Article
ID: 41743.0
Effects on stoichiometry on point defects and impurities in gallium nitride
Authors: Van de Walle, Chris G.; Northrup, John E; Neugebauer, Jörg
Place of Publication: Erlangen, Germany
Publisher: University of Erlangen
Date of Publication (YYYY-MM-DD): 2002-11
Name of Conference/Meeting: 4th Symposium on Non-Stoichiometric III-V Compounds
Title of Proceedings: Proceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds
Start Page: 11
End Page: 18
Title of Series: Physics of Microstructured Semiconductors
Document Type: Conference-Paper
ID: 41742.0
Role of hydrogen in surface reconstructions and growth of GaN
Authors: Van de Walle, Chris G.; Neugebauer, Jörg
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Journal Vacuum Science & Technology B
Volume: 20
Start Page: 1640
End Page: 1646
Document Type: Article
ID: 2553.1
First-principles surface phase diagram for hydrogen on GaN surfaces
Authors: Van de Walle, Chris G.; Neugebauer, Jörg
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Physical Review Letters
Volume: 88
Start Page: 066103-1
End Page: 066103-4
Document Type: Article
ID: 2552.2
 
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Entries: 1-10  
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