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Entries: 1-10  
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Band parameters and strain effects in ZnO and group-III nitrides
Authors: Yan, Qimin; Rinke, Patrick; Winkelnkemper, Momme; Qteish, A.; Bimberg, D.; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2011
Title of Journal: Semiconductor Science and Technology
Volume: 26
Issue / Number: 01
Sequence Number of Article: 014037
Document Type: Article
ID: 477152.0
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Authors: Rinke, P.; Winkelnkemper, M.; Qteish, A.; Bimberg, D.; Neugebauer, J.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 2008-02-19
Title of Journal: Physical Review B
Volume: 77
Sequence Number of Article: 075202
Document Type: Article
ID: 395330.0
Exciting prospects for solids: Exact-exchange based functionals meet quasiparticle energy
Authors: Rinke, P.; Qteish, A.; Bimberg, D.; Neugebauer, J.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 2008-02-01
Title of Journal: Physica Status Solidi (B)
Volume: 245
Issue / Number: 5
Start Page: 929
End Page: 945
Document Type: Article
ID: 395331.0
Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
Authors: Winkelnkemper, Momme; Seguin, R.; Rodt, S.; Schliwa, A.; Reißmann, L.; Strittmacher, A.; Hoffmann, A.; Bimberg, D.
Date of Publication (YYYY-MM-DD): 2007-06-13
Title of Journal: Journal of Applied Physics
Volume: 101
Issue / Number: 11
Start Page: 113708-1
End Page: 113708-4
Document Type: Article
ID: 315234.0
 
Full text / Content available
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory.
Authors: Rinke, P.; Qteish, A.; Winkelnkemper, M.; Bimberg, D.; Neugebauer, J.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Applied Physics Letters
Volume: 89
Issue / Number: 16
Sequence Number of Article: 161919
Document Type: Article
ID: 291372.0
1.3-1.5 ${\mu}$m quantum dot lasers on foreign substrates: Growth using
defect reduction technique, high-power CW operation, and degradation
resistance
Authors: Ledentsov, N. N.; Kovsh, A. R.; Shchukin, V. A.; Mikhrin, S. S.; Krestnikov, I. L.; Kozhukhov, A. V.; Karachinsky, L. Y.; Maximov, M. V.; Novikov, I. I.; Shernyakov, Y. M.; Soshnikov, I. P.; Zhukov, A. E.; Musikhin, Y. G.; Ustinov, V. M.; Zakharov, N. D.; Werner, P.; Kettler, T.; Posilovic, K.; Bimberg, D.; Hu, M.; Nguyen, H. K.; Song, K.; Zah, C.
Place of Publication: San Jose, USA
Publisher: Photonics West
Date of Publication (YYYY-MM-DD): 2006
Title of Proceedings: Proceedings of SPIE
Start Page: 61330S
Document Type: Conference-Paper
ID: 312805.0
20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer
deposition of quantum dots
Authors: Hopfer, F.; Mutig, A.; Fiol, G.; Kuntz, M.; Mikhrin, S. S.; Krestnikov, I. L.; Livshits, D. A.; Kovsh, A. R.; Bornholdt, C.; Shchukin, V. A.; Ledentsov, N. N.; Gysler, V.; Zakharov, N. D.; Werner, P.; Bimberg, D.
Place of Publication: San Jose, USA
Publisher: Photonics West
Date of Publication (YYYY-MM-DD): 2006
Title of Proceedings: Proceedings of SPIE
Start Page: 6
End Page: 12
Document Type: Conference-Paper
ID: 312801.0
Longitudinal photonic bandgap crystal laser diodes with ultra-narrow
vertical beam divergence
Authors: Maximov, M. V.; Shernyakov, Y. M.; Novikov, I. I.; Kuznetsov, S. M.; Karachinsky, L. Y.; Gordeev, N. Y.; Soshnikov, I. P.; Musikhin, Y. G.; Kryzhanovskaya, N. V.; Sharon, A.; Ben Ami, U.; Kalosha, V. P.; Zakharov, N. D.; Werner, P.; Kettler, T.; Posilovic, K.; Shchukin, V. A.; Ledentsov, N. N.; Bimberg, D.
Place of Publication: San Jose, USA
Publisher: Photonics West
Date of Publication (YYYY-MM-DD): 2006
Title of Proceedings: Proceedings of SPIE
Start Page: 611513
Document Type: Conference-Paper
ID: 312806.0
Nanofaceting and alloy decomposition: From basic studies to advanced
photonic devices
Authors: Shchukin, V. A.; Ledentsov, N. N.; Soshnikov, I. P.; Kryzhanovskaya, N. V.; Maximov, M. V.; Zakharov, N. D.; Werner, P.; Bimberg, D.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Microelectronics Journal
Volume: 37
Issue / Number: 12
Start Page: 1451
End Page: 1460
Document Type: Article
ID: 312774.0
Single-mode submonolayer quantum-dot vertical-cavity surface-emitting
lasers with high modulation bandwidth
Authors: Hopfer, F.; Mutig, A.; Kuntz, M.; Fiol, G.; Bimberg, D.; Ledentsov, N. N.; Shchukin, V. A.; Mikhrin, S. S.; Livshits, D. L.; Krestnikov, I. L.; Kovsh, A. R.; Zakharov, N. D.; Werner, P.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Applied Physics Letters
Volume: 89
Issue / Number: 14
Start Page: 141106/1
End Page: 3
Document Type: Article
ID: 312755.0
Entries: 1-10  
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