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Entries: 1-4  
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The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces
Editors: Anastassakis, E. M.; Joannopoulos, J. D.
Authors: Methfessel, M.; Agrawal, B. K.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 1990
Title of Journal: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20)
Start Page: 989
End Page: 992
Document Type: Article
ID: 2088.2
Silicon Donor in Gallium Arsenide and its Relation to DX Centers
Editors: Anastassakis, E. M.; Joannopoulos, J. D.
Authors: Dabrowski, J.; Scheffler, M.; Strehlow, R.
Date of Publication (YYYY-MM-DD): 1990
Title of Journal: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20)
Start Page: 489
End Page: 492
Document Type: Article
ID: 2074.2
Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110)
Editors: Anastassakis, E. M.; Joannopoulos, J. D.
Authors: Hebenstreit, J.; Heinemann, M.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 1990
Title of Journal: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20)
Start Page: 215
End Page: 218
Document Type: Article
ID: 2082.3
Anion-Antisite-like Defects in III-V Compounds
Editors: Anastassakis, E. M.; Joannopoulos, J. D.
Authors: Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 1990
Title of Journal: Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20)
Start Page: 469
End Page: 472
Document Type: Article
ID: 2071.4
Entries: 1-4  
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