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Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN
Authors: Markurt, T.; Lymperakis, L.; Neugebauer, J.; Drechsel, P.; Stauss, P.; Schulz, T.; Remmele, T.; Grillo, V.; Rotunno, E.; Albrecht, M.
Date of Publication (YYYY-MM-DD): 2013-01-18
Title of Journal: Physical Review Letters
Volume: 110
Issue / Number: 3
Start Page: 036103-1
End Page: 036103-5
Document Type: Article
ID: 670850.0
Composition analysis of InGaN quantum wells by STEM-HAADF
Authors: Markurt, T.; Rotunno, E.; Grillo, V.; Duff, A.; Lymperakis, L.; Schulz, T.; Remmele, T.; Albrecht, M.
(Start) Date of Event
(YYYY-MM-DD): 2012-09-16
Name of Conference/Meeting: 15th European Microscopy Congress
Document Type: Poster
ID: 626126.0
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