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Entries: 1-10  
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The interaction of quasi-particles in graphene with
chemical dopants
Authors: Bostwick, Aaron; Ohta, Taisuke; McChesney, Jessica L.; Emtsev, Konstantin V.; Speck, Florian; Seyller, Thomas; Horn, Karsten; Kevan, Stephan D.; Rotenberg, Eli
Date of Publication (YYYY-MM-DD): 2010-08-08
Title of Journal: New Journal of Physics
Volume: 12
Sequence Number of Article: 125014
Document Type: Article
ID: 533739.0
 
Full text / Content available
The formation of an energy gap in graphene on ruthenium by controlling the interface
Authors: Enderlein, Carsten; Kim, Y. S.; Bostwick, Aaron; Rotenberg, Eli; Horn, Karsten
Date of Publication (YYYY-MM-DD): 2010-03-09
Title of Journal: New Journal of Physics
Volume: 12
Issue / Number: 3
Start Page: 033014-1
End Page: 033014-9
Document Type: Article
ID: 463913.0
 
Full text / Content available
Structure and correlation effects in semiconducting SrTiO3
Authors: Chang, Young Jun; Bostwick, Aaron; Kim, Yong Su; Horn, Karsten; Rotenberg, Eli
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Physical Review B
Volume: 81
Sequence Number of Article: 235109
Document Type: Article
ID: 534650.0
 
Full text / Content available
Extended van Hove Singularity and Superconducting Instability in Doped Graphene
Authors: McChesney, J. L.; Bostwick, Aaron; Ohta, Taisuke; Seyller, Thomas; Horn, Karsten; González, J.; Rotenberg, Eli
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Physical Review Letters
Volume: 104
Issue / Number: 13
Sequence Number of Article: 136803
Document Type: Article
ID: 534656.0
 
Full text / Content available
Experimental studies of the electronic structure of graphene
Authors: Bostwick, Aaron; McChesney, Jessica L.; Ohta, Taisuke; Rotenberg, Eli; Seyller, Thomas; Horn, Karsten
Date of Publication (YYYY-MM-DD): 2009-11
Title of Journal: Progress in Surface Science
Volume: 84
Issue / Number: 11-12
Start Page: 380
End Page: 413
Document Type: Article
ID: 433743.0
 
Full text / Content available
Quasiparticle Transformation during a Metal-Insulator Transition in Graphene
Authors: Bostwick, Aaron; McChesney, Jessica L.; Emtsev, Konstantin V.; Seyller, Thomas; Horn, Karsten; Kevan, Stephan D.; Rotenberg, Eli
Date of Publication (YYYY-MM-DD): 2009-07-31
Title of Journal: Physical Review Letters
Volume: 103
Issue / Number: 5
Start Page: 056404-1
End Page: 056404-4
Document Type: Article
ID: 433730.1
 
Full text / Content available
Friction and Dissipation in Epitaxial Graphene Films
Authors: Filleter, T.; McChesney, Jessica L.; Bostwick, Aaron; Rotenberg, Eli; Emtsev, K. V.; Seyller, Thomas; Horn, Karsten; Bennewitz, R.
Date of Publication (YYYY-MM-DD): 2009-02-27
Title of Journal: Physical Review Letters
Volume: 102
Issue / Number: 8
Start Page: 086102-1
End Page: 086102-4
Document Type: Article
ID: 429425.0
 
Full text / Content available
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Authors: Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A.; Röhrl, Jonas; Rotenberg, Eli; Schmid, Andreas K.; Waldmann, Daniel; Weber, Heiko B.; Seyller, Thomas
Date of Publication (YYYY-MM-DD): 2009-02-09
Title of Journal: Nature Materials
Volume: 8
Start Page: 203
End Page: 207
Document Type: Article
ID: 429449.0
 
Full text / Content available
Morphology of graphene thin film growth on SiC(0001)
Authors: Ohta, Taisuke; El Gabaly, Farid; Bostwick, Aaron; McChesney, Jessica L.; Emtsev, Konstantin V.; Schmid, Andreas K.; Seyller, Thomas; Horn, Karsten; Rotenberg, Eli
Date of Publication (YYYY-MM-DD): 2008-02-21
Title of Journal: New Journal of Physics
Volume: 10
Start Page: 023034-1
End Page: 023034-7
Document Type: Article
ID: 401008.0
 
Full text / Content available
Photoemission studies of graphene on SiC: growth, interface, and electronic structure
Authors: Bostwick, Aaron; Emtsev, K. V.; Horn, Karsten; Huwald, E.; Ley, L.; McChesney, Jessica L.; Ohta, Taisuke; Riley, J.; Rotenberg, Eli; Speck, F.; Seyller, Thomas
Title of Book: Advances in Solid State Physics
Start Page: 159
End Page: 170
Place of Publication: Berlin / Heidelberg
Publisher: Springer
Date of Publication (YYYY-MM-DD): 2008-01-23
Document Type: InBook
ID: 319510.0
 
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Entries: 1-10  
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