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Entries: 1-7  
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Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110)
Authors: Hedström, Magnus; Schindlmayr, Arno; Schwarz, Günther; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2006-11-28
Title of Journal: Physical Review Letters
Volume: 97
Issue / Number: 22
Start Page: 226401-1
End Page: 226401-4
Document Type: Article
ID: 291440.0
 
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Untersuchungen zu Defekten auf und nahe der (110)-Oberfläche von GaAs und weiteren III-V-Halbleitern
Authors: Schwarz, Günther
Name of University: Technische Universität Berlin
Place of University: Berlin
Date of Approval (YYYY-MM-DD): 2002-11-01
Document Type: PhD-Thesis
ID: 2574.1
 
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Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors
Authors: Ebert, Ph.; Quadbeck, P.; Urban, K.; Henninger, B.; Horn, Karsten; Schwarz, Günther; Neugebauer, Jörg; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Applied Physics Letters
Volume: 79
Issue / Number: 18
Start Page: 2877
End Page: 2879
Document Type: Article
ID: 2492.0
Point defects on III-V semiconductor surfaces
Authors: Schwarz, Günther; Neugebauer, Jörg; Scheffler, Matthias
Title of Book: Proceedings of the 25th International Conference on the Physics of Semiconductors : Osaka, Japan, September 17 - 22, 2000
Start Page: 1377
End Page: 1380
Place of Publication: Berlin
Publisher: Springer
Date of Publication (YYYY-MM-DD): 2001
Document Type: InBook
ID: 2515.1
 
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Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110)
Authors: Ebert, Ph.; Urban, K.; Aballe, L.; Chen, C. H.; Horn, Karsten; Schwarz, Günther; Neugebauer, Jörg; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Physical Review Letters
Volume: 84
Start Page: 5816
End Page: 5819
Document Type: Article
ID: 2464.1
 
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Electronic and structural properties of vacancies on and below the GaP(110) surface
Authors: Schwarz, Günther; Kley, Alexander; Neugebauer, Jörg; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Physical Review B
Volume: 58
Start Page: 1392
End Page: 1400
Document Type: Article
ID: 2392.1
 
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Theoretische Untersuchungen zu Leerstellen auf der (110)-Oberfläche von GaP
Authors: Schwarz, Günther
Type of Thesis (e.g.Diploma): diplom
Name of University: Technische Universität Berlin
Place of University: Berlin
Document Type: Thesis
ID: 2630.0
Entries: 1-7  
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