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Entries: 1-3  
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Interface trap density in amorphous La2Hf2O7/SiO2 high-k gate stacks on Si
Authors: Mereu, B.; Dimoulas, A.; Vellianitis, G.; Apostolopoulos, G.; Scholz, R.; Alexe, M.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Applied Physics A
Volume: 80
Issue / Number: 2
Start Page: 253
End Page: 257
Document Type: Article
ID: 275297.0
Si overgrowth on Y2O3(100) / Si(001) by molecular beam epitaxy
Authors: Mavrou, G.; Vellianitis, G.; Apostolopoulos, G.; Argyropoulos, K.; Dimoulas, A.; Scholz, R.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Materials Science \& Engineering B
Volume: 109
Issue / Number: 1
Start Page: 39
End Page: 41
Document Type: Article
ID: 223901.0
High epitaxial quality Y2O3 high-k dielectric on vicinal Si(001) surfaces
Authors: Apostolopoulos, G.; Vellianitis, G.; Dimoulas, A.; Alexe, M.; Scholz, R.; Fanciulli, M.; Dekadjevi, D.; Wiemer, C.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Applied Physics Letters
Volume: 81
Issue / Number: 19
Start Page: 3549
End Page: 3551
Document Type: Article
ID: 33105.0
Entries: 1-3  
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