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Entries: 1-4  
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LYRA, a solar UV radiometer on Proba2
Authors: Hochedez, Jean-Francois; Schmutz, W.; Stockman, Y.; Schühle, U.; BenMoussa, A.; Koller, S.; Haenen, K.; Berghmans, D.; Defise, J.-M.; Halain, J.-P.; Theissen, A.; Delouille, V.; Slemzin, V.; Gillotay, D.; Fussen, D.; Dominique, M.; Vanhellemont, F.; McMullin, D.; Kretzschmar, M.; Mitrofanov, A.; Nicula, B.; Wauters, L.; Roth, H.; Rozanov, E.; Rüedi, I.; Wehrli, C.; Soltani, A.; Amano, H.; van der Linden, R.; Zhukov, A.; Clette, F.; Koizumi, S.; Mortet, V.; Remes, Z.; Petersen, R.; Nesládek, M.; D'Olieslaeger, M.; Roggen, J.; Rochus, P.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Advances in Space Research
Volume: 37
Start Page: 303
End Page: 312
Document Type: Article
ID: 303348.0
Hydrogen and acceptor compensation in GaN
Editors: Edgar, J.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.
Authors: Van de Walle, C. G.; Johnson, N. M.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
Volume: 23
Start Page: 317
End Page: 321
Document Type: Article
ID: 2448.1
Yellow luminescence in GaN
Editors: Edgar, J.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.
Authors: Van de Walle, C. G.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
Volume: 23
Start Page: 313
End Page: 316
Document Type: Article
ID: 2450.1
Native defects, impurities, and doping in GaN and related compounds: general remarks
Editors: Edgar, J.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.
Authors: Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
Volume: 23
Start Page: 275
End Page: 280
Document Type: Article
ID: 2451.1
Entries: 1-4  
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