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Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography
Authors: Mehrtens, T.; Schowalter, M.; Tytko, D.; Choi, P.; Raabe, D.; Hoffmann, L.; Jönen, H.; Rossow, U.; Hangleiter, A.; Rosenauer, A.
Date of Publication (YYYY-MM-DD): 2013
Title of Journal: Applied Physics Letters
Volume: 102
Issue / Number: 13
Start Page: 4 pages
Sequence Number of Article: 132112
Document Type: Article
ID: 668578.0
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