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Entries: 1-10  
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Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures
Authors: Lymperakis, L.; Abu-Farsakh, H.; Marquardt, O.; Hickel, T.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2011-08
Title of Journal: Physica Status Solidi B
Volume: 248
Issue / Number: 8
Start Page: 1837
End Page: 1852
Document Type: Article
ID: 581721.0
Understanding the interplay between thermodynamics and surface kinetics in the growth of dilute nitride alloys from first principles
Referees: Neugebauer, J.; Schmidt, W. G.
Authors: Abu-Farsakh, H.
Name of University: University of Paderborn
Place of University: Paderborn, Germany
Date of Approval (YYYY-MM-DD): 2010-07-06
Document Type: PhD-Thesis
ID: 491009.0
Exploring the unusual diffusion of N adatoms on GaAs(001) using first principles calculations
Authors: Abu-Farsakh, H.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2010-03-21
Name of Conference/Meeting: DPG Frühjahrstagung 2010
Place of Conference/Meeting: Regensburg, Germany
Document Type: Talk at Event
ID: 478795.0
Exploring the unusual diffusion of N adatoms at GaAs(001) surface
Authors: Abu-Farsakh, H.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2010-01-25
Name of Conference/Meeting: Computational Materials Science on Complex Energy Landscapes Workshop
Place of Conference/Meeting: Imst, Austria
Document Type: Talk at Event
ID: 446166.0
Combined ab-initio and Monte Carlo calculations to explore the surface thermodynamics and kinetics of dilute nitrides
Authors: Abu-Farsakh, H.; Neugebauer, J.
(Start) Date of Event
(YYYY-MM-DD):
 2009-10-18
Name of Conference/Meeting: 8th International Conference on Nitride Semiconductors (ICNS-8)
Document Type: Poster
ID: 439004.0
Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: An ab initio study
Authors: Abu-Farsakh, H.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2009-04-14
Title of Journal: Physical Review B
Volume: 79
Start Page: 155311
End Page: 155323
Sequence Number of Article: 155311
Document Type: Article
ID: 378141.2
The role of surface kinetics in achieving high non-equilibrium N concentrations in bulk GaAs
Authors: Abu-Farsakh, H.; Neugebauer, J.
(Start) Date of Event
(YYYY-MM-DD):
 2009-03-22
Name of Conference/Meeting: DPG Spring Meeting 2009
Document Type: Poster
ID: 434180.0
Adatom kinetics on and in III-V semiconductor surfaces
Authors: Abu-Farsakh, H.; Lymperakis, L.; Neugebauer, J.
(Start) Date of Event
(YYYY-MM-DD):
 2009-02-10
Name of Conference/Meeting: Scientific Advisory Board Meeting 2009
Document Type: Poster
ID: 441566.0
Solubility and surface kinetics of N in diluted nitrides
Authors: Abu-Farsakh, H.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2008-08-25
Name of Conference/Meeting: Computational Materials Science Workshop
Place of Conference/Meeting: Ebernburg Castle, Germany
Document Type: Talk at Event
ID: 377771.0
Enhancing N solubility in diluted nitrides by surface kinetics: An ab-initio study
Authors: Abu-Farsakh, H.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2008-02-25
Name of Conference/Meeting: Spring meeting of the German Physical Society (DPG)
Place of Conference/Meeting: Berlin, Germany
Document Type: Talk at Event
ID: 337595.0
Entries: 1-10  
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