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Entries: 1-10  
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Uniaxially strained silicon by wafer bonding and layer transfer.
Authors: Himcinschi, C.; Radu, I.; Muster, F.; Singh, R.; Reiche, M.; Petzold, M.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Solid State Electronics
Volume: 51
Issue / Number: 2
Start Page: 226
End Page: 230
Document Type: Article
ID: 350460.0
Strain relaxation in nanopatterned strained silicon round pillars.
Authors: Himcinschi, C.; Singh, R.; Radu, I.; Milenin, A. P.; Erfurth, W.; Reiche, M.; Gösele, U.; Christiansen, S. H.; Muster, F.; Petzold, M.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Applied Physics Letters
Volume: 90
Issue / Number: 2
Sequence Number of Article: 021902/1-3
Document Type: Article
ID: 350463.0
Enhancement of wafer bow of free-standing GaN substrates due to high dose hydrogen implantation: Implication for GaN layer transfer applications
Authors: Singh, R.; Radu, I.; Christiansen, S. H.; Gö”sele, U.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Semiconductor Science and Technology
Volume: 22
Issue / Number: 4
Start Page: 418
End Page: 421
Document Type: Article
ID: 352264.0
High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications
Authors: Singh, R.; Radu, I.; Reiche, M.; Himcinschi, C.; Kuck, B.; Tillack, B.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Applied Surface Science
Volume: 253
Start Page: 3595
End Page: 3599
Document Type: Article
ID: 352265.0
Comparison of SiGe virtual substrates for the fabrication of strained
silicon-on-insulator (sSOI) using wafer bonding and layer transfer
Authors: Radu, I.; Reiche, M.; Himcinschi, C.; Singh, R.; Christiansen, S. H.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: ECS Transactions
Volume: 3
Issue / Number: 7
Start Page: 317
End Page: 324
Document Type: Article
ID: 312830.0
Formation of nanovoids in high-dose hydrogen implanted GaN
Authors: Radu, I.; Singh, R.; Scholz, R.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Applied Physics Letters
Volume: 89
Issue / Number: 3
Start Page: 031912
Document Type: Article
ID: 312840.0
From thin relaxed SiGe buffer layers to strained silicon directly on
oxide
Authors: Mantl, S.; Buca, D.; Holländer, B.; Lenk, S.; Hueging, N.; Luysberg, M.; Carius, R.; Loo, R.; Caymax, M.; Schäfer, H.; Radu, I.; Reiche, M.; Christiansen, S. H.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: ECS Transactions
Volume: 3
Issue / Number: 7
Start Page: 1047
End Page: 1055
Document Type: Article
ID: 312797.0
Investigation of helium implantation induced blistering in InP
Authors: Singh, R.; Radu, I.; Scholz, R.; Himcinschi, C.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Journal of Luminescence
Volume: 121
Issue / Number: 2
Start Page: 379
End Page: 382
Document Type: Article
ID: 312811.0
Investigation of hydrogen implantation induced blistering in GaN
Authors: Singh, R.; Radu, I.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physica Status Solidi C
Volume: 3
Issue / Number: 6
Start Page: 1754
End Page: 1757
Document Type: Article
ID: 312886.0
Low temperature InP layer transfer onto Si by helium implantation and
direct wafer bonding
Authors: Singh, R.; Radu, I.; Scholz, R.; Himcinschi, C.; Gösele, U.; Christiansen, S. H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Semiconductor Science and Technology
Volume: 21
Issue / Number: 9
Start Page: 1311
End Page: 1314
Document Type: Article
ID: 312857.0
Entries: 1-10  
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