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Entries: 1-10  
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Isotope effects in elemental semiconductors: a Raman study of silicon
Authors: Widulle, F.; Ruf, T.; Konuma, M.; Silier, I.; Cardona, M.; Kriegseis, W.; Ozhogin, V. I.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Solid State Communications
Volume: 118
Start Page: 1
End Page: 22
Document Type: Article
ID: 181915.0
Isotope disorder effects in the Raman spectrum
Authors: Widulle, F.; Ruf, T.; Konuma, M.; Silier, I.; Kriegseis, W.; Ozhogin, V.I.; Cardona, M.
Place of Publication: Berlin/Heidelberg, Germany
Publisher: Springer Verlag
Date of Publication (YYYY-MM-DD): 2001
Name of Conference/Meeting: 25th International Conference on the Physics of Semiconductors
Title of Proceedings: Proceedings of the 25th International Conference on the Physics of Semiconductors
Start Page: 69
End Page: 70
Title of Series: Springer Proceedings in Physics
Volume (in Series): 87
Document Type: Conference-Paper
ID: 285462.0
Liquid phase epitaxy of Si from Pb solutions.
Authors: Konuma, M.; Cristiani, G.; Czech, E.; Silier, I.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Journal of Crystal Growth
Volume: 198-199
Start Page: 1045
End Page: 1048
Document Type: Article
ID: 180841.0
Raman studies of isotope effects in Si and GaAs.
Authors: Widulle, F.; Ruf, T.; Göbel, A.; Silier, I.; Schönherr, E.; Cardona, M.; Camacho, J.; Cantarero, A.; Kriegseis, W.; Ozhogin, V. I.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Physica B
Volume: 263-264
Start Page: 381
End Page: 383
Document Type: Article
ID: 181229.0
Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE.
Authors: Sembian, A. M.; Konuma, M.; Silier, I.; Gutjahr, A.; Rollbühler, N.; Banhart, F.; Babu, S. M.; Ramasamy, P.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Thin Solid Films
Volume: 336
Start Page: 116
End Page: 119
Document Type: Article
ID: 181131.0
Defect distribution in compositionally graded epitaxial SiGe layers on Si substrates.
Editors: Cullis, A. G.; Hutchison, J. L.
Authors: Lyutovich, K.; Ernst, F.; Banhart, F.; Silier, I.; Gutjahr, A.; Konuma, M.
Title of Book: Microscopy of Semiconducting Materials 1997: Proceedings of the Royal Microscopical Society Conference
Start Page: 131
End Page: 134
Place of Publication: Bristol
Publisher: Institute of Physics Publishing
Date of Publication (YYYY-MM-DD): 1998
Document Type: InBook
ID: 182165.0
SiGe thin-film structures for solar cells.
Editors: Jones, E. D.
Authors: Brémond, G.; Daami, A.; Laugier, A.; Seifert, W.; Kittler, M.; Poortmans, J.; Caymax, M.; Said, K.; Konuma, M.; Gutjahr, A.; Silier, I.
Title of Book: Thin-Film Structures for Photovoltaics
Start Page: 43
End Page: 48
Place of Publication: Warrendale
Publisher: Materials Research Society
Date of Publication (YYYY-MM-DD): 1998
Document Type: InBook
ID: 180616.0
Surface morphology of LPE SiGe layers grown on (100)Si substrates.
Editors: Jones, E. D.
Authors: Sembian, A. M.; Silier, I.; Davies, K.; Gutjahr, A.; Lyutovich, K.; Konuma, M.; Banhart, F.
Title of Book: Thin-Film Structures for Photovoltaics
Start Page: 19
End Page: 24
Place of Publication: Warrendale
Publisher: Materials Research Society
Date of Publication (YYYY-MM-DD): 1998
Document Type: InBook
ID: 180419.0
Low temperature passivation for SiGe-alloy solar cells.
Editors: Ossenbrink, H. A.
Authors: Said, K.; Poortmans, J.; Liberzny, M.; Caymax, M.; Nijs, J.; Mertens, R.; Vinckier, C.; Vyncke, D.; Seifert, W.; Kittler, M.; Silier, I.; Gutjahr, A.; Konuma, M.
Title of Book: Proceedings of the 14th European Photovoltaic Solar Energy Conference
Start Page: 986
End Page: 992
Place of Publication: Bedford
Publisher: Stephens
Date of Publication (YYYY-MM-DD): 1997
Document Type: InBook
ID: 180388.0
SiGe layer structures for solar cell application grown by liquid phase epitaxy.
Authors: Gutjahr, A.; Silier, I.; Rollbühler, N.; Konuma, M.; Banhart, F.; Said, K.; Poortmans, J.
Title of Book: Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference 1997
Start Page: 759
End Page: 762
Place of Publication: New York
Publisher: IEEE
Date of Publication (YYYY-MM-DD): 1997
Document Type: InBook
ID: 182979.0
Entries: 1-10  
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