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Entries: 1-4  
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Hydrogen and acceptor compensation in GaN
Editors: Edgar, J.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.
Authors: Van de Walle, C. G.; Johnson, N. M.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
Volume: 23
Start Page: 317
End Page: 321
Document Type: Article
ID: 2448.1
Yellow luminescence in GaN
Editors: Edgar, J.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.
Authors: Van de Walle, C. G.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
Volume: 23
Start Page: 313
End Page: 316
Document Type: Article
ID: 2450.1
Native defects, impurities, and doping in GaN and related compounds: general remarks
Editors: Edgar, J.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.
Authors: Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
Volume: 23
Start Page: 275
End Page: 280
Document Type: Article
ID: 2451.1
Theory of point defects and interfaces
Editors: Ponce, F. A.; Moustakas, T. D.; Akasaki, I.; Monemar, B. A.
Authors: Van de Walle, C. G.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 1997
Title of Journal: MRS Symposia Proc.: III-V Nitrides
Volume: 449
Start Page: 861
Document Type: Article
ID: 2365.1
Entries: 1-4  
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