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Metal-adlayer-stabilized ZnO(0001) sufaces: Towards a new growth mode for oxides |
Authors: Northrup, J. E.; Neugebauer, J. | Date of Publication (YYYY-MM-DD): 2005 | Title of Journal: Applied Physics Letters | Volume: 87 | Sequence Number of Article: 141914 | Document Type: Article | ID: 289764.0 |
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Review of structure of bare and adsorbate-covered GaN(0001) surfaces |
Authors: Feenstra, R. M.; Northrup, J. E.; Neugebauer, Jörg | Date of Publication (YYYY-MM-DD): 2002 | Title of Journal: MRS Internet Journal Nitride Semiconductor Research | Volume: 7 | Issue / Number: 3 | Start Page: 1 | End Page: 27 | Document Type: Article | ID: 8735.0 |
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Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory |
Authors: Chen, H.; Feenstra, R. M.; Northrup, J. E.; Neugebauer, Jörg; Greve, D. W. | Date of Publication (YYYY-MM-DD): 2001 | Title of Journal: MRS Internet Journal of Nitride Semiconductor Research | Volume: 6 | Start Page: U1 | End Page: U12 | Document Type: Article | ID: 2489.0 |
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Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys |
Authors: Northrup, J. E.; Romano, L. T.; Neugebauer, Jörg | Date of Publication (YYYY-MM-DD): 1999 | Title of Journal: Applied Physics Letters | Volume: 74 | Start Page: 2319 | End Page: 2322 | Document Type: Article | ID: 2436.0 |
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