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Entries: 1-4  
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High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon
Authors: Evans-Freeman, J. H.; Peaker, A. R.; Hawkins, I. D.; Kan, P. Y. Y.; Terry, J.; Rubaldo, L.; Ahmed, M.; Watts, S.; Dobaczewski, L.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Materials Science in Semiconductor Processing
Volume: 3
Start Page: 237
End Page: 241
Document Type: Article
ID: 181442.0
Vacancy-related defects in ion implanted and electron irradiated silicon
Authors: Peaker, A. R.; Evans-Freeman, J. H.; Kan, P. Y. Y.; Hawkins, I. D.; Terry, J.; Jeynes, C.; Rubaldo, L.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Materials Science and Engineering B
Volume: 71
Start Page: 143
End Page: 147
Document Type: Article
ID: 181722.0
Gold-hydrogen complexes in silicon.
Authors: Rubaldo, L.; Deixler, P.; Hawkins, I. D.; Terry, J.; Maude, D. K.; Portal, J. C.; Evans-Freeman, J. H.; Dobaczewski, L.; Peaker, A. R.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Materials Science and Engineering B
Volume: 58
Start Page: 126
End Page: 129
Document Type: Article
ID: 181084.0
Hydrogen reactions with electron irradiation damage in silicon.
Authors: Peaker, A. R.; Evans-Freeman, J. H.; Kan, P. Y. Y.; Rubaldo, L.; Hawkins, I. D.; Vernon-Parry, K. D.; Dobaczewski, L.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Physica B
Volume: 274
Start Page: 243
End Page: 246
Document Type: Article
ID: 181723.0
Entries: 1-4  
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