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Entries: 1-10  
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Magnetopolaron effect on shallow donors in GaN
Authors: Wysmołek, A.; Stępniewski, R.; Potemski, M.; Chwalisz-Pietka, B.; Pakula, K.; Baranowski, J. M.; Look, D. C.; Park, S. S.; Lee, K. Y.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physical Review B
Volume: 74
Issue / Number: 19
Sequence Number of Article: 195205
Document Type: Article
ID: 306010.0
Reply to "Comment on 'Recombination of excitons bound to oxygen and silicon donors in freestanding GaN' "
Authors: Wysmołek, A.; Korona, K. P.; Stępniewski, R.; Baranowski, J. M.; Bloniarz, J.; Potemski, M.; Jones, R. L.; Look, D. C.; Kuhl, J.; Park, S. S.; Lee, S. K.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Physical Review B
Volume: 69
Issue / Number: 15
Sequence Number of Article: 157302
Document Type: Article
ID: 192934.0
The chemical vapour transport growth of ZnO single crystals
Authors: Mycielski, A.; Kowalczyk, L.; Szadkowski, A.; Chwalisz, B.; Wysmołek, A.; Stępniewski, R.; Baranowski, J. M.; Potemski, M.; Witowski, A.; Jakiela, R.; Barcza, A.; Witkowska, B.; Kaliszek, W.; Jedrzejczak, A.; Suchocki, A.; Lusakowska, E.; Kaminska, E.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Journal of Alloys and Compounds
Volume: 371
Issue / Number: 1-2
Start Page: 150
End Page: 152
Document Type: Article
ID: 192937.0
Dynamics of trapping on donors and relaxation of the B-exciton in GaN
Authors: Korona, K. P.; Wysmołek, A.; Stępniewski, R.; Potemski, M.; Kuhl, J.; Baranowski, J. M.; Martinez, G.; Grzegory, I.; Porowski, S.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: physica status solidi (b)
Volume: 235
Issue / Number: 1
Start Page: 31
End Page: 35
Document Type: Article
ID: 7465.0
Resonant interaction of LO phonons with excited donor states in GaN
Authors: Wysmołek, A.; Potemski, M.; Stępniewski, R.; Baranowski, J. M.; Look, D. C.; Lee, S. K.; Han, J. Y.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: physica status solidi (b)
Volume: 235
Issue / Number: 1
Start Page: 36
End Page: 39
Document Type: Article
ID: 7466.0
Fine structure of effective mass acceptors in gallium nitride
Authors: Stępniewski, R.; Wysmołek, A.; Potemski, M.; Pakuła, K.; Baranowski, J. M.; Grzegory, I.; Porowski, S.; Martinez, G.; Wyder, P.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Physical Review Letters
Volume: 91
Issue / Number: 22
Sequence Number of Article: 226404
Document Type: Article
ID: 64927.0
Recombination of excitons bound to oxygen and silicon donors in freestanding GaN
Authors: Wysmołek, A.; Korona, K. P.; Stępniewski, R.; Baranowski, J. M.; Bloniarz, J.; Potemski, M.; Jones, R. L.; Look, D. C.; Kuhl, J.; Park, S. S.; Lee, S. K.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Physical Review B
Volume: 66
Issue / Number: 24
Sequence Number of Article: 245317
Document Type: Article
ID: 7472.0
Magneto-spectroscopy of two-electron transitions in homoepitaxial GaN
Authors: Wojdak, M.; Baranowski, J. M.; Wysmolek, A.; Pakula, K.; Stepniewski, R.; Potemski, M.; Grzegory, I.; Porowski, S.
Place of Publication: Warrendale, PA, USA
Publisher: Materials Research Society
Date of Publication (YYYY-MM-DD): 2002
Name of Conference/Meeting: Materials Research Society Fall Meeting
Title of Proceedings: Proceedings of GaN and Related Alloys
Sequence Number: 533
Title of Series: Materials Research Society Symposium Proceedings
Volume (in Series): 693
Document Type: Conference-Paper
ID: 286777.0
Step-like photoluminescence dynamics in field-effect structures containing quantum dots
Authors: Korona, K. P.; Babinski, A.; Kuhl, J.; Baranowski, J. M.; Leon, R.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: physica status solidi (b)
Volume: 227
Start Page: 605
End Page: 612
Document Type: Article
ID: 182537.0
Magneto-Spectroscopy of Donor-Bound Excitons in Homoepitaxial GaN
Authors: Wysmołek, A.; Sapega, V. F.; Ruf, T.; Cardona, M.; Potemski, M.; Wyder, P.; Stępniewski, R.; Pakula, K.; Baranowski, J. M.; Grzegory, I.; Porowski, S.
Place of Publication: Japan
Publisher: Institute of Pure and Applied Physics
Date of Publication (YYYY-MM-DD): 2000
Name of Conference/Meeting: International Workshop on Nitride Semiconductors
Title of Proceedings: IPAP Conference Series
Sequence Number: 579
Volume (in Series): 1
Document Type: Conference-Paper
ID: 285863.0
Entries: 1-10  
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