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Entries: 1-10  
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A method for the characterization of strain fields in buried quantum dots using x-ray standing waves
Authors: Novák, J.; Holý, V.; Stangl, J.; Bauer, G.; Wintersberger, E.; Kiravittaya, S.; Schmidt, O. G.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Journal of Physics D
Volume: 38
Start Page: A137
End Page: A142
Document Type: Article
ID: 244495.0
Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping
Authors: Schulli, T. U.; Stoffel, M.; Hesse, A.; Stangl, J.; Lechner, R. T.; Wintersberger, E.; Sztucki, M.; Metzger, T. H.; Schmidt, O. G.; Bauer, G.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Physical Review B
Volume: 71
Issue / Number: 3
Sequence Number of Article: 035326
Document Type: Article
ID: 244231.0
Structural properties of semiconductor nanostructures from x-ray scattering
Authors: Stangl, J.; Schülli, T.; Hesse, A.; Holý, V.; Bauer, G.; Stoffel, M.; Schmidt, O. G.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Advances in Solid State Physics
Volume: 44
Start Page: 227
End Page: 240
Document Type: Article
ID: 199196.0
Shape and composition change of Ge dots due to Si capping
Authors: Kirfel, O.; Müller, E.; Grützmacher, D.; Kern, K.; Hesse, A.; Stangl, J.; Holý, V.; Bauer, G.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Applied Surface Science
Volume: 224
Start Page: 139
End Page: 142
Document Type: Article
ID: 285484.0
Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction
Authors: Stangl, J.; Hesse, A.; Holý, V.; Zhong, Z.; Bauer, G.; Denker, U.; Schmidt, O. G.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Applied Physics Letters
Volume: 82
Issue / Number: 14
Start Page: 2251
End Page: 2253
Document Type: Article
ID: 64646.0
Structural properties of SiGe islands: Effect of capping
Authors: Stangl, J.; Hesse, A.; Holý, V.; Bauer, G.; Denker, U.; Schmidt, O. G.; Kirfel, O.; Grützmacher, D.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Materials Research Society Symposium Proceedings
Volume: 749
Start Page: 403
End Page: 406
Document Type: Article
ID: 199110.0
Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
Authors: Hesse, A.; Stangl, J.; Holý, V.; Roch, T.; Bauer, G.; Schmidt, O. G.; Denker, U.; Struth, B.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Physical Review B
Volume: 66
Issue / Number: 8
Sequence Number of Article: 085321
Document Type: Article
ID: 7167.0
Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers
Authors: Meduňa, M.; Holý, V.; Stangl, J.; Hesse, A.; Roch, T.; Bauer, G.; Schmidt, O. G.; Eberl, K.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Physica E
Volume: 13
Issue / Number: 2-4
Start Page: 1003
End Page: 1007
Document Type: Article
ID: 7153.0
Strain and composition distribution in uncapped SiGe islands from x-ray diffraction
Authors: Stangl, J.; Daniel, A.; Holý, V.; Roch, T.; Bauer, G.; Kegel, I.; Metzger, T. H.; Wiebach, T.; Schmidt, O. G.; Eberl, K.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Applied Physics Letters
Volume: 79
Start Page: 1474
End Page: 1476
Document Type: Article
ID: 182745.0
Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy
Authors: Stangl, J.; Roch, T.; Bauer, G.; Kegel, I.; Metzger, T. H.; Schmidt, O. G.; Eberl, K.; Kienzle, O.; Ernst, F.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Applied Physics Letters
Volume: 77
Start Page: 3953
End Page: 3955
Document Type: Article
ID: 181880.0
Entries: 1-10  
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