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Entries: 1-10  
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Manganese as a fast charge carrier trapping center in InP
Authors: Korona, K. P.; Wysmołek, A.; Kamińska, M.; Twardowski, A.; Piersa, M.; Palczewska, M.; Strzelecka, G.; Hruban, A.; Kuhl, J.; Adomavicius, R.; Krotkus, A.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physica B
Volume: 382
Issue / Number: 1-2
Start Page: 220
End Page: 228
Document Type: Article
ID: 306251.0
Influence of quantum dot density on excitonic transport and recombination in CdZnTe/ZnTe QD structures
Authors: Korona, K. P.; Wojnar, P.; Gaj, J. A.; Karczewski, G.; Kossut, J.; Kuhl, J.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Solid State Communications
Volume: 133
Issue / Number: 6
Start Page: 369
End Page: 373
Document Type: Article
ID: 244236.0
Dynamics of Ground and Excited States of Bound Excitons in Gallium Nitride
Authors: Korona, K. P.; Wysmołek, A.; Stepniewski, R.; Kuhl, J.; Look, D. C.; Lee, S. K.; Han, J. Y.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Journal of Luminescence
Volume: 112
Start Page: 30
End Page: 33
Document Type: Article
ID: 261331.0
Reply to "Comment on 'Recombination of excitons bound to oxygen and silicon donors in freestanding GaN' "
Authors: Wysmołek, A.; Korona, K. P.; Stępniewski, R.; Baranowski, J. M.; Bloniarz, J.; Potemski, M.; Jones, R. L.; Look, D. C.; Kuhl, J.; Park, S. S.; Lee, S. K.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Physical Review B
Volume: 69
Issue / Number: 15
Sequence Number of Article: 157302
Document Type: Article
ID: 192934.0
Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN
Authors: Korona, K. P.; Doradzinski, R.; Palczewska, M.; Pietras, M.; Kaminska, M.; Kuhl, J.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: physica status solidi (b)
Volume: 235
Issue / Number: 1
Start Page: 40
End Page: 43
Document Type: Article
ID: 7029.0
Dynamics of trapping on donors and relaxation of the B-exciton in GaN
Authors: Korona, K. P.; Wysmołek, A.; Stępniewski, R.; Potemski, M.; Kuhl, J.; Baranowski, J. M.; Martinez, G.; Grzegory, I.; Porowski, S.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: physica status solidi (b)
Volume: 235
Issue / Number: 1
Start Page: 31
End Page: 35
Document Type: Article
ID: 7465.0
Dynamics of excitonic recombination and interactions in homoepitaxial GaN
Authors: Korona, K. P.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Physical Review B
Volume: 65
Issue / Number: 23
Sequence Number of Article: 235312
Document Type: Article
ID: 7227.0
Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers
Authors: Korona, K. P.; Prystawko, P.; Leszczynski, M.; Perlin, P.; Suski, T.; Grzegory, I.; Porowski, S.; Kuhl, J.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Materials Science and Engineering B
Volume: 93
Issue / Number: 1-3
Start Page: 73
End Page: 76
Document Type: Article
ID: 7279.0
Recombination of excitons bound to oxygen and silicon donors in freestanding GaN
Authors: Wysmołek, A.; Korona, K. P.; Stępniewski, R.; Baranowski, J. M.; Bloniarz, J.; Potemski, M.; Jones, R. L.; Look, D. C.; Kuhl, J.; Park, S. S.; Lee, S. K.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Physical Review B
Volume: 66
Issue / Number: 24
Sequence Number of Article: 245317
Document Type: Article
ID: 7472.0
Dynamics of photoexcited carriers in GaInAs/GaAs quantum dots
Authors: Ilczuk, E.; Korona, K. P.; Babinski, A.; Kuhl, J.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Acta Physica Polonica A
Volume: 100
Start Page: 379
End Page: 386
Document Type: Article
ID: 182494.0
Entries: 1-10  
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