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Entries: 1-9  
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Fine structure of effective mass acceptors in gallium nitride
Authors: Stępniewski, R.; Wysmołek, A.; Potemski, M.; Pakuła, K.; Baranowski, J. M.; Grzegory, I.; Porowski, S.; Martinez, G.; Wyder, P.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Physical Review Letters
Volume: 91
Issue / Number: 22
Sequence Number of Article: 226404
Document Type: Article
ID: 64927.0
Electron effective mass in hexagonal GaN.
Authors: Witowski, A. M.; Pakuła, K.; Baranowski, J. M.; Sadowski, M. L.; Wyder, P.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Applied Physics Letters
Volume: 75
Start Page: 4154
End Page: 4155
Document Type: Article
ID: 182023.0
Polarised magnetoluminescence of excitons in homoepitaxial GaN layers
Authors: Wysmołek, A.; Potemski, M.; Stępniewski, R.; Lusakowski, J.; Pakuła, K.; Baranowski, J. M.; Martinez, G.; Wyder, P.; Grzegory, I.; Porowski, S.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: physica status solidi (b)
Volume: 216
Start Page: 11
End Page: 15
Document Type: Article
ID: 181239.0
Symmetry of excitons in GaN.
Authors: Stępniewski, R.; Potemski, M.; Wysmołek, A.; Pakuła, K.; Baranowski, J. M.; Lusakowski, J.; Korona, K. P.; Grzegory, I.; Porowski, S.; Martinez, G.; Wyder, P.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Physical Review B
Volume: 60
Start Page: 4438
End Page: 4441
Document Type: Article
ID: 181154.0
Effect of pressure on exciton energiesof homoepitaxial GaN.
Authors: Liu, Z. X.; Korona, K. P.; Syassen, K.; Kuhl, J.; Pakuła, K.; Baranowski, J. M.; Grzegory, I.; Porowski, S.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Solid State Communications
Volume: 108
Start Page: 433
End Page: 438
Document Type: Article
ID: 182166.0
Far infrared magnetospectroscopy of shallow donors in GaN.
Authors: Witowski, A. M.; Sadowski, M. L.; Pakuła, K.; Wyder, P.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: physica status solidi (b)
Volume: 210
Start Page: 385
End Page: 388
Document Type: Article
ID: 181237.0
Far infrared spectroscopy of shallow donors in bulk GaN.
Editors: Gershoni, D.
Authors: Witowski, A. M.; Sadowski, M. L.; Pakuła, K.; Wyder, P.
Title of Book: Proceedings of the 24th International Conference on the Physics of Semiconductors
Start Page: 1662
End Page: 1666
Place of Publication: Singapore
Publisher: World Scientific
Date of Publication (YYYY-MM-DD): 1998
Document Type: InBook
ID: 181236.0
Impurity related luminescence of homiepitaxial GaN studied with high magnetic fields.
Authors: Stępniewski, R.; Wysmołek, A.; Potemski, M.; Lusakowski, J.; Korona, K. P.; Pakuła, K.; Baranowski, J. M.; Martinez, G.; Grzegory, I.; Porowski, S.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: physica status solidi (b)
Volume: 210
Start Page: 373
End Page: 384,
Document Type: Article
ID: 180441.0
Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR.
Authors: Witowski, A. M.; Sadowski, M. L.; Pakuła, K.; Suchanek, B.; Stępniewski, R.; Baranowski, J. M.; Potemski, M.; Martinez, G.; Wyder, P.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: MRS Internet Journal of Nitride Semiconductor Research
Volume: 3
Start Page: 24
End Page: 28
Document Type: Article
ID: 181238.0
Entries: 1-9  
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