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Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity
Authors: Uematsu, M.; Kageshima, H.; Takahshi, Y.; Fukatsu, S.; Itoh, K.M.; Shiraishi, K.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Applied Physics Letters.
Volume: 84
Issue / Number: 6
Start Page: 876
End Page: 878
Document Type: Article
ID: 223850.0
Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2
Authors: Fukatsu, S.; Takahashi, T.; Itoh, K.M.; Uematsu, M.; Fujiwara, A.; Kageshima, H.; Takahashi, Y.; Shiraishi, K.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Applied Physics Letters.
Volume: 83
Start Page: 3897
End Page: 3899
Document Type: Article
ID: 190255.0
Entries: 1-2  
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