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Entries: 1-10  
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The interaction of quasi-particles in graphene with
chemical dopants
Authors: Bostwick, Aaron; Ohta, Taisuke; McChesney, Jessica L.; Emtsev, Konstantin V.; Speck, Florian; Seyller, Thomas; Horn, Karsten; Kevan, Stephan D.; Rotenberg, Eli
Date of Publication (YYYY-MM-DD): 2010-08-08
Title of Journal: New Journal of Physics
Volume: 12
Sequence Number of Article: 125014
Document Type: Article
ID: 533739.0
 
Full text / Content available
Selective adsorption of coronene on Si(1 1 1)-(7 × 7)
Authors: Martínez-Blanco, Jesus; Klingsporn, Max; Horn, Karsten
Date of Publication (YYYY-MM-DD): 2010-03-15
Title of Journal: Surface Science
Volume: 604
Issue / Number: 5-6
Start Page: 523
End Page: 528
Document Type: Article
ID: 466083.0
 
Full text / Content available
The formation of an energy gap in graphene on ruthenium by controlling the interface
Authors: Enderlein, Carsten; Kim, Y. S.; Bostwick, Aaron; Rotenberg, Eli; Horn, Karsten
Date of Publication (YYYY-MM-DD): 2010-03-09
Title of Journal: New Journal of Physics
Volume: 12
Issue / Number: 3
Start Page: 033014-1
End Page: 033014-9
Document Type: Article
ID: 463913.0
 
Full text / Content available
Induced magnetism of carbon atoms at the graphene/Ni(111) interface
Authors: Weser, Martin; Rehder, Yvonne; Horn, Karsten; Sicot, M.; Fonin, M.; Preobrajenski, Alexeij B.; Voloshina, E. N.; Goering, E.; Dedkov, Yurij S.
Date of Publication (YYYY-MM-DD): 2010-01-05
Title of Journal: Applied Physics Letters
Volume: 96
Start Page: 012504-1
End Page: 012504-3
Document Type: Article
ID: 442087.1
 
Full text / Content available
Structure and correlation effects in semiconducting SrTiO3
Authors: Chang, Young Jun; Bostwick, Aaron; Kim, Yong Su; Horn, Karsten; Rotenberg, Eli
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Physical Review B
Volume: 81
Sequence Number of Article: 235109
Document Type: Article
ID: 534650.0
 
Full text / Content available
Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon
Authors: Dil, J. Hugo; Hülsen, Björn; Kampen, Thorsten U.; Kratzer, Peter; Horn, Karsten
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Journal of Physics: Condensed Matter
Volume: 22
Issue / Number: 13
Sequence Number of Article: 135008
Document Type: Article
ID: 534654.0
Extended van Hove Singularity and Superconducting Instability in Doped Graphene
Authors: McChesney, J. L.; Bostwick, Aaron; Ohta, Taisuke; Seyller, Thomas; Horn, Karsten; González, J.; Rotenberg, Eli
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Physical Review Letters
Volume: 104
Issue / Number: 13
Sequence Number of Article: 136803
Document Type: Article
ID: 534656.0
 
Full text / Content available
Enhanced electron correlations, local moments, and Curie temperature in strained MnAs nanocrystals embedded in GaAs
Authors: Moreno, M.; Cerdá, J. I.; Ploog, K. H.; Horn, Karsten
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Physical Review B
Volume: 82
Issue / Number: 04
Sequence Number of Article: 045117
Document Type: Article
ID: 534673.0
 
Full text / Content available
Experimental studies of the electronic structure of graphene
Authors: Bostwick, Aaron; McChesney, Jessica L.; Ohta, Taisuke; Rotenberg, Eli; Seyller, Thomas; Horn, Karsten
Date of Publication (YYYY-MM-DD): 2009-11
Title of Journal: Progress in Surface Science
Volume: 84
Issue / Number: 11-12
Start Page: 380
End Page: 413
Document Type: Article
ID: 433743.0
 
Full text / Content available
Manganese adlayers on i-Al-Pd-Mn quasicrystal: growth and electronic structure
Authors: Shukla, A. K.; Dhaka, R. S.; D’Souza, S. W.; Maniraj, M.; Barman, Sudipto Roy; Horn, Karsten; Ebert, P.; Urban, K.; Wu, D.; Lograsso, T. A.
Date of Publication (YYYY-MM-DD): 2009-10-07
Title of Journal: Journal of Physics Condensed Matter
Volume: 21
Start Page: 405005-1
End Page: 405005-8
Document Type: Article
ID: 446688.0
Entries: 1-10  
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