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Entries: 1-7  
Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001)
Authors: Marzegalli, A.; Zinovyev, V. A.; Montalenti, F.; Rastelli, A.; Stoffel, M.; Merdzhanova, T.; Schmidt, O. G.; Miglio, L.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Physical Review Letters
Volume: 99
Issue / Number: 23
Sequence Number of Article: 235505
Document Type: Article
ID: 338893.0
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001)
Authors: Montalenti, F.; Raiteri, P.; Migas, D. B.; von Känel, H.; Rastelli, A.; Manzano, C.; Costantini, G.; Denker, U.; Schmidt, O. G.; Kern, K.; Miglio, L.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Physical Review Letters
Volume: 93
Sequence Number of Article: 216102
Document Type: Article
ID: 213132.0
The BOOMERANG North America instrument: a balloon-borne bolometric radiometer optimized for measurements of cosmic background radiation anisotropies from 0.3d to 4°
Authors: Piacentini, F.; Ade, P. A. R.; Bhatia, R. S.; Bock, J. J.; Boscaleri, A.; Cardoni, P.; Crill, B. P.; de Bernardis, P.; Del Castillo, H.; De Troia, G.; Farese, P.; Giacometti, M.; Hivon, E. F.; Hristov, V. V.; Iacoangeli, A.; Lange, A. E.; Masi, S.; Mauskopf, P. D.; Miglio, L.; Netterfield, C. B.; Palangio, P.; Pascale, E.; Raccanelli, A.; Rao, S.; Romeo, G.; Ruhl, J.; Scaramuzzi, F.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Astrophysical Journal Supplement Series
Volume: 138
Start Page: 314
End Page: 336
Document Type: Article
ID: 17299.0
Surface energies and surface relaxation at TiSi2 competing phases
Authors: Iannuzzi, M.; Miglio, L.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Surface Science
Volume: 479
Start Page: 201
End Page: 212
Document Type: Article
ID: 182492.0
Strain dependent gap nature of epitaxial β-FeSi2 in silicon by first principles calculations.
Authors: Miglio, L.; Meregalli, V.; Jepsen, O.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Applied Physics Letters
Volume: 75
Start Page: 385
End Page: 388
Document Type: Article
ID: 180925.0
Electronic origin of the stability trand in TiSi2 phases with Al or Mo layers.
Authors: Bònoli, F.; Iannuzzi, M.; Miglio, L.; Meregalli, V.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Applied Physics Letters
Volume: 73
Start Page: 1964
End Page: 1966
Document Type: Article
ID: 182884.0
Theory of FeSi2 direct gap semiconductor on Si(100).
Authors: Miglio, L.; Meregalli, V.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Journal of Vacuum Science and Technology B
Volume: 16
Start Page: 1604
End Page: 1609
Document Type: Article
ID: 181983.0
Entries: 1-7  
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