Home News About Us Contact Contributors Disclaimer Privacy Policy Help FAQ

Home
Search
Quick Search
Advanced
Fulltext
Browse
Collections
Persons
My eDoc
Session History
Login
Name:
Password:
Documentation
Help
Support Wiki
Direct access to
document ID:


          Display Documents


Institute:
Collection:
Print in Citation style Print version     Display:
Sort by: Display records with Fulltext only
Entries: 1-6  
 Basket 
Saddle point for oxygen reorientation in the vicinity of a silicon vacancy
Authors: Dobaczewski, L.; Andersen, O. K.; Rubaldo, L.; Gościński, K.; Markevich, V. P.; Peaker, A. R.; Nielsen, K. B.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Physical Review B
Volume: 67
Issue / Number: 19
Sequence Number of Article: 195204
Document Type: Article
ID: 64751.0
Piezoscopic deep-level transient spectroscopy studies of the silicon divacancy
Authors: Dobaczewski, L.; Gościński, K.; Żytkiewicz, Z. R.; Nielsen, K. B.; Rubaldo, L.; Andersen, O. K.; Peaker, A. R.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Physical Review B
Volume: 65
Issue / Number: 11
Sequence Number of Article: 113203
Document Type: Article
ID: 7575.0
High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon
Authors: Evans-Freeman, J. H.; Peaker, A. R.; Hawkins, I. D.; Kan, P. Y. Y.; Terry, J.; Rubaldo, L.; Ahmed, M.; Watts, S.; Dobaczewski, L.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Materials Science in Semiconductor Processing
Volume: 3
Start Page: 237
End Page: 241
Document Type: Article
ID: 181442.0
Vacancy-related defects in ion implanted and electron irradiated silicon
Authors: Peaker, A. R.; Evans-Freeman, J. H.; Kan, P. Y. Y.; Hawkins, I. D.; Terry, J.; Jeynes, C.; Rubaldo, L.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Materials Science and Engineering B
Volume: 71
Start Page: 143
End Page: 147
Document Type: Article
ID: 181722.0
Gold-hydrogen complexes in silicon.
Authors: Rubaldo, L.; Deixler, P.; Hawkins, I. D.; Terry, J.; Maude, D. K.; Portal, J. C.; Evans-Freeman, J. H.; Dobaczewski, L.; Peaker, A. R.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Materials Science and Engineering B
Volume: 58
Start Page: 126
End Page: 129
Document Type: Article
ID: 181084.0
Hydrogen reactions with electron irradiation damage in silicon.
Authors: Peaker, A. R.; Evans-Freeman, J. H.; Kan, P. Y. Y.; Rubaldo, L.; Hawkins, I. D.; Vernon-Parry, K. D.; Dobaczewski, L.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Physica B
Volume: 274
Start Page: 243
End Page: 246
Document Type: Article
ID: 181723.0
Entries: 1-6  
The scope and number of records on eDoc is subject to the collection policies defined by each institute - see "info" button in the collection browse view.