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Entries: 1-6  
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Electrical properties of nominally undoped silicon nanowires grown by molecularbeam
epitaxy.
Authors: Bauer, J.; Fleischer, F.; Breitenstein, O.; Schubert, L.; Werner, P.; Gösele, U.; Zacharias, M.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Journal of Applied Physics
Volume: 90
Issue / Number: 1
Sequence Number of Article: 012105/1–3
Document Type: Article
ID: 349991.0
Gold-enhanced oxidation of silicon nanowires
Authors: Werner, P.; Büttner, C. C.; Schubert, L.; Gerth, G.; Zakharov, N. D.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: International Journal of Materials Research
Volume: 98
Issue / Number: 11
Start Page: 1066
End Page: 1070
Document Type: Article
ID: 352450.0
Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular
beam epitaxy
Authors: Zakharov, N. D.; Werner, P.; Gerth, G.; Schubert, L.; Sokolov, L.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Journal of Crystal Growth
Volume: 290
Issue / Number: 1
Start Page: 6
End Page: 10
Document Type: Article
ID: 312935.0
On the formation of Si nanowires by molecular beam epitaxy
Authors: Werner, P.; Zakharov, N. D.; Gerth, G.; Schubert, L.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: International Journal of Materials Research
Volume: 97
Issue / Number: 7
Start Page: 1008
End Page: 1015
Document Type: Article
ID: 312907.0
Silicon and SiGe nanowhiskers grown on (100) Si substrate by molecular beam epitaxy
Authors: Werner, P.; Schubert, L.; Zakharov, N.D.; Gerth, G.; Gösele, U.
Publisher: The Electrochemical Society
Date of Publication (YYYY-MM-DD): 2004
Title of Proceedings: Proceedings Electrochemical Society, SiGe: Materials, Processing and Devices
Start Page: 251
End Page: 259
Document Type: Conference-Paper
ID: 223801.0
Silicon nanowhiskers grown on (111) Si substrates by molecular beam epitaxy
Authors: Schubert, L.; Werner, P.; Zakharov, N.D.; Gerth, G.; Kolb, F.M.; Long, L.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Applied Physics Letters.
Volume: 84
Issue / Number: 24
Start Page: 4968
End Page: 4970
Document Type: Article
ID: 223859.0
Entries: 1-6  
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