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Entries: 1-5  
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Growth of Si whiskers by MBE: Mechanism and peculiarities
Authors: Zakharov, N. D.; Werner, P.; Sokolov, L.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Physica E
Volume: 37
Start Page: 148
End Page: 152
Document Type: Article
ID: 352461.0
Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular
beam epitaxy
Authors: Zakharov, N. D.; Werner, P.; Gerth, G.; Schubert, L.; Sokolov, L.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Journal of Crystal Growth
Volume: 290
Issue / Number: 1
Start Page: 6
End Page: 10
Document Type: Article
ID: 312935.0
Formation of Si/Ge multilayer nanostructures in Si whiskers by MBE
Authors: Zakharov, N.D.; Werner, P.; Gerth, G.; Sokolov, L.; Gö”sele, U.
Place of Publication: St. Petersburg, Russia
Publisher: Ioffe Institute
Date of Publication (YYYY-MM-DD): 2005
Title of Proceedings: Proceedings 13th International Symposium on Nanostructures: Physics and Technology
Start Page: 264
End Page: 265
Document Type: Conference-Paper
ID: 275208.0
Precise control of size and density of self-assembled Ge dot on Si(100) by carbon-induced strain-engineering
Authors: Wakayama, Y.; Sokolov, L.; Zakharov, N.D.; Werner, P.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Applied Surface Science
Volume: 216
Issue / Number: 1-4
Start Page: 419
End Page: 423
Document Type: Article
ID: 190196.0
Stabilization and fine control of Ge dot structure on Si (100) by C cover layer
Authors: Wakayama, Y.; Sokolov, L.; Zakharov, N.D.; Werner, P.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Journal of Applied Physics.
Volume: 83
Start Page: 440
End Page: 442
Document Type: Article
ID: 190195.0
Entries: 1-5  
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