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Entries: 1-6  
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Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation
Authors: Michel, B.; Giza, M.; Krumrey, M.; Eichler, M.; Grundmeier, G.; Klages, C. P.
Date of Publication (YYYY-MM-DD): 2009
Title of Journal: Journal of Applied Physics
Volume: 105
Issue / Number: 7
Sequence Number of Article: 073302 (9pp)
Document Type: Article
ID: 498730.0
Patterned DBD pretreatment at ambient pressure for low-temperature
wafer bonding
Authors: Eichler, M.; Michel, B.; Thomas, M.; Ruddy, C.; Reinecke, H.; Reiche, M.; Gabriel, M.; Klages, C. P.
Place of Publication: Japonsko, Japan
Date of Publication (YYYY-MM-DD): 2006
Title of Proceedings: Proceedings 10th International Symposium on High Pressure Low
Temperature Plasma Chemistry (HAKONE X)
Start Page: 322
End Page: 325
Document Type: Conference-Paper
ID: 312792.0
Wafer direct bonding with ambient pressure plasma activation
Authors: Gabriel, M.; Johnson, B.; Suss, R.; Reiche, M.; Eichler, M.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Microsystem Technologies
Volume: 12
Issue / Number: 5
Start Page: 397
End Page: 400
Document Type: Article
ID: 312789.0
Capabilities of an ambient pressure plasma for activation in LT wafer bonding processes
Authors: Gabriel, M.; Cetin, V.; Hansen, S.; Reiche, M.; Radu, I.; Eichler, M.
Place of Publication: Pennington, USA
Publisher: The Electrochemical Society
Date of Publication (YYYY-MM-DD): 2005
Title of Proceedings: Proceedings of the International Symposium Semiconductor Wafer Bonding VIII, Science and Technology, and Applications
Start Page: 50
End Page: 57
Title of Series: Proceedings volume / Electrochemical Society
Volume (in Series): 2005-02
Document Type: Conference-Paper
ID: 275360.0
Mechanisms of low-temperature wafer bonding
Authors: Reiche, M.; Radu, I.; Gabriel, M.; Zoberbier, M.; Hansen, S.; Eichler, M.
Place of Publication: Pennington, USA
Publisher: The Electrochemical Society
Date of Publication (YYYY-MM-DD): 2005
Title of Proceedings: Proceedings of the International Symposium Semiconductor Wafer Bonding VIII, Science and Technology, and Applications
Start Page: 326
End Page: 337
Volume (in Series): 2005-02
Document Type: Conference-Paper
ID: 275262.0
Low-temperature direct wafer bonding with ambient pressure plasma activation
Authors: Gabriel, M.; Brad, J.; Suess, R.; Reiche, M.; Eichler, M.
Publisher: MANCEF
Date of Publication (YYYY-MM-DD): 2004
Title of Proceedings: Proceedings 9th International Conference on the Commercialization of Micro and Nano Systems
Start Page: 353
End Page: 357
Document Type: Conference-Paper
ID: 223954.0
Entries: 1-6  
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