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Entries: 1-10  
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Interactions between marine biota and ENSO: a conceptual model analysis
Authors: Heinemann, M.; Timmermann, A.; Fendel, U.
Date of Publication (YYYY-MM-DD): 2011
Title of Journal: Nonlinear Processes in Geophysics
Volume: 18
Start Page: 29
End Page: 40
Document Type: Article
ID: 498458.0
Paleocene-Eeocene thermal maximum warming does not require massive greenhouse gas release
Authors: Heinemann, M.; Jungclaus, J. H.; Schmidt, H.; Rast, S.; Marotzke, J.
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Nature Geoscience
Document Type: Article
ID: 498669.0
Warm and sensitive Paleocene-Eocene climate
Authors: Heinemann, M.
Name of University: University of Hamburg
Place of University: Hamburg
Date of Approval (YYYY-MM-DD): 2009-07-06
Document Type: PhD-Thesis
ID: 437704.0
Warm Paleocene/Eocene climate as simulated in ECHAM5/MPI-OM
Source
Authors: Heinemann, M.; Jungclaus, J. H.; Marotzke, J.
Date of Publication (YYYY-MM-DD): 2009
Title of Journal: Climate of the Past
Volume: 5
Start Page: 785
End Page: 802
Document Type: Article
ID: 442251.0
 
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The formation of a Schottky barrier: Na on GaAs(110)
Editors: Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.
Authors: Heinemann, M.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 1994
Title of Journal: Proc. 4th Int. Conf. on the Formation of Semiconductor Interfaces (ICFSI-4)
Start Page: 297
End Page: 300
Document Type: Article
ID: 2215.1
Thick sodium overlayers on GaAs(110)
Authors: Heinemann, M.; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 1994
Title of Journal: Physical Review B
Volume: 49
Start Page: 5516
End Page: 5521
Document Type: Article
ID: 2216.1
 
Full text / Content available
Microscopic properties of thin films: Learning about point defects
Authors: Ourmazd, A.; Scheffler, M.; Heinemann, M.; Rouviere, J.-L.
Date of Publication (YYYY-MM-DD): 1992
Title of Journal: MRS Bulletin
Volume: 17
Start Page: 24
End Page: 31
Document Type: Article
ID: 2136.0
Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface
Authors: Heinemann, M.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 1992
Title of Journal: Appl. Surf. Sci.
Volume: 56-58
Start Page: 628
End Page: 631
Document Type: Article
ID: 2127.2
 
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Elektronische und atomare Struktur von GaAs/AlAs-Grenzflächen
Authors: Heinemann, M.
Name of University: TU
Place of University: Berlin
Date of Approval (YYYY-MM-DD): 1991
Document Type: PhD-Thesis
ID: 2568.1
Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes
Authors: Hebenstreit, J.; Heinemann, M.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 1991
Title of Journal: Physical Review Letters
Volume: 67
Start Page: 1031
End Page: 1034
Document Type: Article
ID: 2104.3
 
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Entries: 1-10  
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