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Entries: 1-10  
Adaptation to changing water resources in the Ganges basin, northern India
Authors: Moors, E. J.; Groot, A.; Biemans, H.; van Scheltinga, C. T.; Siderius, C.; Stoffel, M.; Huggel, C.; Wiltshire, A.; Mathison, C.; Ridley, J.; Jacob, D.; Kumar, P.; Bhadwal, S.; Gosain, A.; Collins, D. N.
Date of Publication (YYYY-MM-DD): 2011
Title of Journal: Environmental Science and Policy
Sequence Number of Article: Online First
Document Type: Article
ID: 562686.0
Atomic ordering dependence on growth method in Ge:Si(001) islands: Influence of surface kinetic and thermodynamic interdiffusion mechanisms
Authors: Malachias, A.; Stoffel, M.; Schmidbauer, M.; Schulli, T. U.; Medeiros-Ribeiro, G.; Schmidt, O. G.; Magalhaes-Paniago, R.; Metzger, T. H.
Date of Publication (YYYY-MM-DD): 2010-07-15
Title of Journal: Physical Review B
Volume: 82
Issue / Number: 3
Sequence Number of Article: 035307
Document Type: Article
ID: 488956.0
Full text / Content available
Composition and atomic ordering of Ge/Si(001) wetting layers
Authors: Malachias, A.; Metzger, T. H.; Stoffel, M.; Schmidt, O. G.; Holý, V.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Thin Solid Films
Volume: 515
Issue / Number: 14
Start Page: 5587
End Page: 5592
Document Type: Article
ID: 338615.0
Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001)
Authors: Marzegalli, A.; Zinovyev, V. A.; Montalenti, F.; Rastelli, A.; Stoffel, M.; Merdzhanova, T.; Schmidt, O. G.; Miglio, L.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Physical Review Letters
Volume: 99
Issue / Number: 23
Sequence Number of Article: 235505
Document Type: Article
ID: 338893.0
Investigating the lateral motion of SiGe islands by selective chemical etching
Authors: Katsaros, G.; Rastelli, A.; Stoffel, M.; Isella, G.; von Känel, H.; Bittner, A. M.; Tersoff, J.; Denker, U.; Schmidt, O. G.; Costantini, G.; Kern, K.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Surface Science
Volume: 600
Start Page: 2608
End Page: 2613
Document Type: Article
ID: 286851.0
Dendrochronology of strain-relaxed islands
Authors: Merdzhanova, T.; Kiravittaya, S.; Rastelli, A.; Stoffel, M.; Denker, U.; Schmidt, O.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physical Review Letters
Volume: 96
Issue / Number: 22
Sequence Number of Article: 226103
Document Type: Article
ID: 306170.0
Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3 virtual substrates
Authors: Stoffel, M.; Zhang, J.; Schmidt, O. G.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: IEICE Transactions on Electronics
Volume: E89-C
Issue / Number: 7
Start Page: 921
End Page: 925
Document Type: Article
ID: 306244.0
Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
Authors: Katsaros, G.; Rastelli, A.; Stoffel, M.; Costantini, G.; Schmidt, O. G.; Kern, K.; Tersoff, J.; Müller, E.; von Känel, H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Applied Physics Letters
Volume: 89
Issue / Number: 25
Sequence Number of Article: 253105
Document Type: Article
ID: 306006.0
Local equilibrium and global relaxation of strained SiGe/Si(001) layers
Authors: Stoffel, M.; Rastelli, A.; Tersoff, J.; Merdzhanova, T.; Schmidt, O. G.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physical Review B
Volume: 74
Issue / Number: 15
Sequence Number of Article: 155326
Document Type: Article
ID: 306178.0
Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands
Authors: Stoffel, M.; Rastelli, A.; Merdzhanova, T.; Kar, G. S.; Schmidt, O. G.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Microelectronics Journal
Volume: 37
Start Page: 1528
End Page: 1531
Document Type: Article
ID: 306206.0
Entries: 1-10  
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