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Entries: 1-6  
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Band parameters and strain effects in ZnO and group-III nitrides
Authors: Yan, Qimin; Rinke, Patrick; Winkelnkemper, Momme; Qteish, A.; Bimberg, D.; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2011
Title of Journal: Semiconductor Science and Technology
Volume: 26
Issue / Number: 01
Sequence Number of Article: 014037
Document Type: Article
ID: 477152.0
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Authors: Rinke, Patrick; Winkelnkemper, Momme; Qteish, Abdallah; Bimberg, Dieter; Neugebauer, Jörg; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2008-02-19
Title of Journal: Physical Review B
Volume: 77
Issue / Number: 7
Start Page: 075202-1
End Page: 075202-15
Document Type: Article
ID: 328337.0
 
Full text / Content available
Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
Authors: Winkelnkemper, Momme; Seguin, R.; Rodt, S.; Schliwa, A.; Reißmann, L.; Strittmacher, A.; Hoffmann, A.; Bimberg, D.
Date of Publication (YYYY-MM-DD): 2007-06-13
Title of Journal: Journal of Applied Physics
Volume: 101
Issue / Number: 11
Start Page: 113708-1
End Page: 113708-4
Document Type: Article
ID: 315234.0
 
Full text / Content available
Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
Authors: Seguin, Robert; Schliwa, Andrei; Germann, T. D.; Rodt, S.; Pötschke, K.; Strittmatter, A.; Pohl, U. W.; Bimberg, Dieter; Winkelnkemper, Momme; Hammerschmidt, Thomas; Kratzer, Peter
Date of Publication (YYYY-MM-DD): 2006-12-27
Title of Journal: Applied Physics Letters
Volume: 89
Issue / Number: 26
Start Page: 263109-1
End Page: 263109-3
Document Type: Article
ID: 290887.0
 
Full text / Content available
Interrelation of structural and electronic properties in InxGa1-xN/GaN quantum dots using an eight-band k · p model
Authors: Winkelnkemper, Momme; Schliwa, Andrei; Bimberg, Dieter
Date of Publication (YYYY-MM-DD): 2006-10-26
Title of Journal: Physical Review B
Volume: 74
Issue / Number: 15
Start Page: 155322-1
End Page: 155322-12
Document Type: Article
ID: 287119.0
 
Full text / Content available
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
Authors: Rinke, Patrick; Scheffler, Matthias; Qteish, Abdallah; Winkelnkemper, Momme; Bimberg, Dieter; Neugebauer, Jörg
Date of Publication (YYYY-MM-DD): 2006-10-20
Title of Journal: Applied Physics Letters
Volume: 89
Issue / Number: 16
Start Page: 161919-1
End Page: 161919-3
Document Type: Article
ID: 286968.0
 
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Entries: 1-6  
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