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Entries: 1-10  
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Elastic strain relaxation in axial Si/Ge whisker heterostructures.
Authors: Hanke, M.; Eisenschmidt, C.; Werner, P.; Zakharov, N. D.; Syrowatka, F.; Heyroth, F.; Schäfer, P.; Konovalov, O.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Physical Review B
Volume: 75
Issue / Number: 16
Sequence Number of Article: 161303/1-3
Document Type: Article
ID: 350459.0
Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots
Authors: Smirnov, M. B.; Talalaev, V. G.; Novikov, B. V.; Sarangov, S. V.; Cirlin, G. E.; Zakharov, N. D.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Physics of the Solid State
Volume: 49
Issue / Number: 6
Start Page: 1184
End Page: 1190
Document Type: Article
ID: 352369.0
Resonances related to an array of InAs quantum dots and controlled by an external electric field
Authors: Talalaev, V. G.; Novikov, B. V.; Sokolov, A. S.; Strom, I. V.; Tomm, J. W.; Zakharov, N. D.; Werner, P.; Cirlin, G. E.; Tonkikh, A. A.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Semiconductors
Volume: 41
Issue / Number: 2
Start Page: 197
End Page: 204
Document Type: Article
ID: 352443.0
Gold-enhanced oxidation of silicon nanowires
Authors: Werner, P.; Büttner, C. C.; Schubert, L.; Gerth, G.; Zakharov, N. D.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: International Journal of Materials Research
Volume: 98
Issue / Number: 11
Start Page: 1066
End Page: 1070
Document Type: Article
ID: 352450.0
Growth of Si whiskers by MBE: Mechanism and peculiarities
Authors: Zakharov, N. D.; Werner, P.; Sokolov, L.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Physica E
Volume: 37
Start Page: 148
End Page: 152
Document Type: Article
ID: 352461.0
1.3-1.5 ${\mu}$m quantum dot lasers on foreign substrates: Growth using
defect reduction technique, high-power CW operation, and degradation
resistance
Authors: Ledentsov, N. N.; Kovsh, A. R.; Shchukin, V. A.; Mikhrin, S. S.; Krestnikov, I. L.; Kozhukhov, A. V.; Karachinsky, L. Y.; Maximov, M. V.; Novikov, I. I.; Shernyakov, Y. M.; Soshnikov, I. P.; Zhukov, A. E.; Musikhin, Y. G.; Ustinov, V. M.; Zakharov, N. D.; Werner, P.; Kettler, T.; Posilovic, K.; Bimberg, D.; Hu, M.; Nguyen, H. K.; Song, K.; Zah, C.
Place of Publication: San Jose, USA
Publisher: Photonics West
Date of Publication (YYYY-MM-DD): 2006
Title of Proceedings: Proceedings of SPIE
Start Page: 61330S
Document Type: Conference-Paper
ID: 312805.0
20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer
deposition of quantum dots
Authors: Hopfer, F.; Mutig, A.; Fiol, G.; Kuntz, M.; Mikhrin, S. S.; Krestnikov, I. L.; Livshits, D. A.; Kovsh, A. R.; Bornholdt, C.; Shchukin, V. A.; Ledentsov, N. N.; Gysler, V.; Zakharov, N. D.; Werner, P.; Bimberg, D.
Place of Publication: San Jose, USA
Publisher: Photonics West
Date of Publication (YYYY-MM-DD): 2006
Title of Proceedings: Proceedings of SPIE
Start Page: 6
End Page: 12
Document Type: Conference-Paper
ID: 312801.0
Band structure and photoluminescence of
Ge$_{0.8}$Si$_{0.2}$/Ge$_{0.1}$Si$_{0.9}$ superlattice with vertically
correlated quantum dots
Authors: Sibirev, N. V.; Talalaev, V. G.; Tonkikh, A. A.; Cirlin, G. E.; Dubrovskii, V. G.; Zakharov, N. D.; Werner, P.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Semiconductors
Volume: 40
Issue / Number: 2
Start Page: 224
End Page: 228
Document Type: Article
ID: 312902.0
Biasing of stacked InAs quantum dot array: Tuning of inter-dot
resonance and control of electron-hole alignment
Authors: Talalaev, V. G.; Tomm, J. W.; Zakharov, N. D.; Werner, P.; Gösele, U.; Novikov, B. V.; Sokolov, A. S.; Winzer, A.; Gobsch, G.; Tonkikh, A. A.
Place of Publication: St. Petersburg, Russia
Publisher: Ioffe Physico-Technical Institute
Date of Publication (YYYY-MM-DD): 2006
Title of Proceedings: Proceedings 14th International Symposium Nanostructures: Physics
and Technology
Start Page: 150
End Page: 151
Document Type: Conference-Paper
ID: 312800.0
Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular
beam epitaxy
Authors: Zakharov, N. D.; Werner, P.; Gerth, G.; Schubert, L.; Sokolov, L.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Journal of Crystal Growth
Volume: 290
Issue / Number: 1
Start Page: 6
End Page: 10
Document Type: Article
ID: 312935.0
Entries: 1-10  
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