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Entries: 1-8  
Nanomechanics of single crystalline tungsten nanowires
Authors: Cimalla, V.; Röhlig, C.-C.; von Pezoldt, J.; Niebelschütz, M.; Ambacher, O.; Brückner, K.; Hein, M.; Weber, J.; Milenkovic, S.; Smith, A. J.; Hassel, A. W.
Date of Publication (YYYY-MM-DD): 2008
Title of Journal: J. Nanomater.
Volume: 2008
Start Page: 638947
End Page: 638956
Document Type: Article
ID: 359022.0
Full text / Content available
Nanomechanics with nanowires and nano-electro-mechanical systems
Authors: Cimalla, V.; Brückner, K.; Hassel, A. W.; Hein, M. A.; Niebelschütz, F.; Niebelschütz, M.; von Pezoldt, J.; Romanus, H.; Röhlig, C. C.; Tonisch, K.; Weber, J.; Ambacher, O.
Name of Conference/Meeting: Workshop Development, characterization and industrial application of nanostructured thin films, hard and superhard coatings
Document Type: Conference-Paper
ID: 331358.0
Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres
Authors: Tonisch, K.; Weise, F.; Stubenrauch, M.; Cimalla, V.; Ecke, G.; Will, F.; Romanus, H.; Mrotzek, S.; Hofmeister, H.; Hoffmann, M.; Hülsenberg, D.; Ambacher, O.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Physica E
Volume: 38
Start Page: 40
End Page: 43
Document Type: Article
ID: 352445.0
Dielectric function of hexagonal AlN films determined by spectroscopic elipsometry in the vacuum-uv spectral range.
Authors: Wethkamp, T.; Wilmers, K.; Cobet, C.; Esser, N.; Richter, W.; Ambacher, O.; Stutzmann, M.; Cardona, M.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Physical Review B
Volume: 59
Start Page: 1845
End Page: 1849
Document Type: Article
ID: 181221.0
Polarity determination of a GaN thin film on sapphire (0001) with X-ray standing waves.
Authors: Kazimirov, A.; Scherb, G.; Zegenhagen, J.; Lee, T. L.; Bedzyk, M. J.; Kelly, M. K.; Angerer, H.; Ambacher, O.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Journal of Applied Physics
Volume: 84
Start Page: 1703
End Page: 1705
Document Type: Article
ID: 182216.0
Spectroscopic ellipsometry of AlxGa1-xN in the energy range 3-25 eV.
Authors: Wethkamp, T.; Wilmers, K.; Esser, N.; Richter, W.; Ambacher, O.; Angerer, H.; Jungk, G.; Johnson, R. L.; Cardona, M.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Thin Solid Films
Volume: 313-314
Start Page: 745
End Page: 750
Document Type: Article
ID: 180490.0
Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire.
Authors: Pau, S.; Liu, Z.; Kuhl, J.; Ringling, J.; Grahn, H. T.; Khan, M. A.; Sun, C. J.; Ambacher, O.; Stutzmann, M.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Physical Review B
Volume: 57
Start Page: 7066
End Page: 7070
Document Type: Article
ID: 181950.0
Raman spectra of isotopic GaN.
Authors: Zhang, J.; Ruf, T.; Cardona, M.; Ambacher, O.; Stutzmann, M.; Wagner, J.-M.; Bechstedt, F.
Date of Publication (YYYY-MM-DD): 1997
Title of Journal: Physical Review B
Volume: 56
Start Page: 14399
End Page: 14406
Document Type: Article
ID: 180506.0
Entries: 1-8  
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