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Shape and composition change of Ge dots due to Si capping
Authors: Kirfel, O.; Müller, E.; Grützmacher, D.; Kern, K.; Hesse, A.; Stangl, J.; Holý, V.; Bauer, G.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Applied Surface Science
Volume: 224
Start Page: 139
End Page: 142
Document Type: Article
ID: 285484.0
Shape transformation of Ge quantum dots due to Si overgrowth
Authors: Kirfel, O.; Müller, E.; Grützmacher, D.; Kern, K.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Physica E
Volume: 16
Issue / Number: 3-4
Start Page: 602
End Page: 608
Document Type: Article
ID: 64633.0
Structural properties of SiGe islands: Effect of capping
Authors: Stangl, J.; Hesse, A.; Holý, V.; Bauer, G.; Denker, U.; Schmidt, O. G.; Kirfel, O.; Grützmacher, D.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Materials Research Society Symposium Proceedings
Volume: 749
Start Page: 403
End Page: 406
Document Type: Article
ID: 199110.0
Entries: 1-3  
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