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Entries: 1-10  
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Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells
Authors: Marquardt, O.; Hickel, T.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2013
Title of Journal: Applied Physics Letters
Volume: 103
Issue / Number: 7
Start Page: 073115-1
End Page: 073115-4
Document Type: Article
ID: 670855.0
Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects
Authors: Schuh, K.; Barthel, S.; Marquardt, O.; Hickel, T.; Neugebauer, J.; Czycholl, G.; Jahnke, F.
Date of Publication (YYYY-MM-DD): 2012-02-27
Title of Journal: Applied Physics Letters
Volume: 100
Start Page: 092103-1
End Page: 092103-4
Document Type: Article
ID: 614897.0
A flexible, plane-wave based multiband k.p model
Authors: Marquardt, O.; Schulz, S.; Freysoldt, C.; Boeck, S.; Hickel, T.; O’Reilly, E. P.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2011-12-04
Title of Journal: Optical and Quantum Electronics
Volume: 44
Issue / Number: 3
Start Page: 183
End Page: 188
Document Type: Article
ID: 614917.0
A flexible, plane-wave-based formulation of continuum elasticity and multiband k.p models
Authors: Marquardt, O.; Schulz, S.; O’Reilly, E. P.; Freysoldt, C.; Boeck, S.; Hickel, T.; Neugebauer, J.
Name of Conference/Meeting: 11th Intern. Conference on Numerical Simulation of Optoelectronic Devices
Start Page: 111
End Page: 112
Document Type: Conference-Paper
ID: 626132.0
Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures
Authors: Marquardt, O.; Hickel, T.; Neugebauer, J.; Gambaryan, K. M.; Aroutiounian, V. M.
Date of Publication (YYYY-MM-DD): 2011-08-22
Title of Journal: Journal of Applied Physics
Volume: 110
Issue / Number: 4
Start Page: 043708-1
End Page: 043708-6
Document Type: Article
ID: 581726.0
Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures
Authors: Lymperakis, L.; Abu-Farsakh, H.; Marquardt, O.; Hickel, T.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2011-08
Title of Journal: Physica Status Solidi B
Volume: 248
Issue / Number: 8
Start Page: 1837
End Page: 1852
Document Type: Article
ID: 581721.0
Growth process, characterization and optoelectronic properties of InAsSbP dot-pit cooperative nanostructures
Authors: Marquardt, O.; Gambaryan, K. M.; Aroutiounian, V. M.; Hickel, T.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2010-06-21
Name of Conference/Meeting: VCIAN 2010
Place of Conference/Meeting: Santorini, Greece
Document Type: Talk at Event
ID: 491010.0
Implementation and application of continuum elasticity theory and a k.p-model to investigate optoelectronic properties of semiconductor nanostructures
Referees: Neugebauer, J.; Schmidt, W. G.
Authors: Marquardt, O.
Name of University: University of Paderborn
Place of University: Paderborn, Germany
Date of Approval (YYYY-MM-DD): 2010-05-05
Document Type: PhD-Thesis
ID: 491008.0
Plane-wave implementation of the real-space k.p formalism and continuum elasticity theory
Authors: Marquardt, O.; Boeck, S.; Freysoldt, C.; Hickel, T.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2010-04
Title of Journal: Computer Physics Communications
Volume: 181
Issue / Number: 4
Start Page: 765
End Page: 771
Document Type: Article
ID: 434562.2
Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots
Authors: Marquardt, O.; Hickel, T.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2010-01-25
Name of Conference/Meeting: Computational Materials Science on Complex Energy Landscapes Workshop
Place of Conference/Meeting: Imst, Austria
Document Type: Talk at Event
ID: 446174.0
Entries: 1-10  
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