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Entries: 1-7  
Fundamentals of Semiconductors
Authors: Yu, P. Y.; Cardona, M.
Place of Publication: Berlin/Heidelberg, Germany
Publisher: Springer Verlag
Date of Publication (YYYY-MM-DD): 2003
Physical Description
(e.g. Total Number of Pages):
Document Type: Book
ID: 124451.0
Spectroscopic study of partially ordered semiconductor heterojunction under high pressure and high magnetic field
Authors: Yu, P. Y.; Martinez, G.; Zeman, J.; Uchida, K.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Journal of Raman Spectroscopy
Volume: 32
Start Page: 835
End Page: 839
Document Type: Article
ID: 182806.0
GaAs/(ordered)GaInP2 heterostructures under pressure and high magnetic fields.
Authors: Zeman, J.; Martinez, G.; Yu, P. Y.; Kwok, S. H.; Uchida, K.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: physica status solidi (b)
Volume: 211
Start Page: 239
End Page: 246
Document Type: Article
ID: 181245.0
Nanometer size determination of type-II domains in CuPt-ordered GaInP2 with high-pressure magneto-luminescence.
Authors: Zeman, J.; Jullian, S.; Martinez, G.; Yu, P. Y.; Uchida, K.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Europhysics Letters
Volume: 47
Start Page: 260
End Page: 266
Document Type: Article
ID: 181246.0
Study of the photoluminescence upconversion from partially ordered GaInP/GaAs heterostructures under high magnetic field and high pressure.
Authors: Uchida, K.; Yu, P. Y.; Zeman, J.; Martinez, G.; Matsumoto, K.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Transactions of the Institute of Electronics, Information and Communication Engineers C-II
Volume: 82
Start Page: 392
End Page: 397
Document Type: Article
ID: 181182.0
Electron confinement in (ordered) GaInP2/GaAs/ (ordered) GaInP2 single quantum well.
Authors: Zeman, J.; Martinez, G.; Kwok, S. H.; Yu, P. Y.; Uchida, K.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Physica B
Volume: 249-251
Start Page: 735
End Page: 739
Document Type: Article
ID: 180502.0
Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures.
Authors: Kwok, S. H.; Yu, P. Y.; Zeman, J.; Jullian, S.; Martinez, G.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Journal of Applied Physics
Volume: 84
Start Page: 2846
End Page: 2854
Document Type: Article
ID: 182191.0
Entries: 1-7  
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