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Entries: 1-3  
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Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN
Authors: Markurt, T.; Lymperakis, L.; Neugebauer, J.; Drechsel, P.; Stauss, P.; Schulz, T.; Remmele, T.; Grillo, V.; Rotunno, E.; Albrecht, M.
Date of Publication (YYYY-MM-DD): 2013-01-18
Title of Journal: Physical Review Letters
Volume: 110
Issue / Number: 3
Start Page: 036103-1
End Page: 036103-5
Document Type: Article
ID: 670850.0
Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting
Authors: Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.
(Start) Date of Conference/Meeting
(YYYY-MM-DD): 2012-06-24
Name of Conference/Meeting: International Conference on Extended Defects in Semiconductors
Place of Conference/Meeting: Thessaloniki, Greek
Document Type: Talk at Event
ID: 626122.0
Electronic structure and optical properties of β-FeSi2.
Authors: Antonov, V. N.; Jepsen, O.; Henrion, W.; Rebien, M.; Stauss, P.; Lange, H.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Physical Review B
Volume: 57
Start Page: 8934
End Page: 8938
Document Type: Article
ID: 182857.0
Entries: 1-3  
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