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Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN |
Authors: Markurt, T.; Lymperakis, L.; Neugebauer, J.; Drechsel, P.; Stauss, P.; Schulz, T.; Remmele, T.; Grillo, V.; Rotunno, E.; Albrecht, M. | Date of Publication (YYYY-MM-DD): 2013-01-18 | Title of Journal: Physical Review Letters | Volume: 110 | Issue / Number: 3 | Start Page: 036103-1 | End Page: 036103-5 | Document Type: Article | ID: 670850.0 |
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Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting |
Authors: Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P. | (Start) Date of Conference/Meeting (YYYY-MM-DD): 2012-06-24 | Name of Conference/Meeting: International Conference on Extended Defects in Semiconductors | Place of Conference/Meeting: Thessaloniki, Greek | Document Type: Talk at Event | ID: 626122.0 |
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