Please note that eDoc will be permanently shut down in the first quarter of 2021!      Home News About Us Contact Contributors Disclaimer Privacy Policy Help FAQ

Home
Search
Quick Search
Advanced
Fulltext
Browse
Collections
Persons
My eDoc
Session History
Login
Name:
Password:
Documentation
Help
Support Wiki
Direct access to
document ID:


          Display Documents


Institute:
Collection:
Print in Citation style Print version     Display:
Sort by: Display records with Fulltext only
Entries: 1-3  
 Basket 
Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN
Authors: Markurt, T.; Lymperakis, L.; Neugebauer, J.; Drechsel, P.; Stauss, P.; Schulz, T.; Remmele, T.; Grillo, V.; Rotunno, E.; Albrecht, M.
Date of Publication (YYYY-MM-DD): 2013-01-18
Title of Journal: Physical Review Letters
Volume: 110
Issue / Number: 3
Start Page: 036103-1
End Page: 036103-5
Document Type: Article
ID: 670850.0
Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting
Authors: Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2012-06-24
Name of Conference/Meeting: International Conference on Extended Defects in Semiconductors
Place of Conference/Meeting: Thessaloniki, Greek
Document Type: Talk at Event
ID: 626122.0
Electronic structure and optical properties of β-FeSi2.
Authors: Antonov, V. N.; Jepsen, O.; Henrion, W.; Rebien, M.; Stauss, P.; Lange, H.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Physical Review B
Volume: 57
Start Page: 8934
End Page: 8938
Document Type: Article
ID: 182857.0
Entries: 1-3  
The scope and number of records on eDoc is subject to the collection policies defined by each institute - see "info" button in the collection browse view.