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Entries: 1-4  
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Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): Theory and experiment
Authors: Kratzer, Peter; Liu, Q. K. K.; Acosta-Diaz, P.; Manzano, C.; Costantini, G.; Songmuang, R.; Rastelli, A.; Schmidt, O. G.; Kern, K.
Date of Publication (YYYY-MM-DD): 2006-05-31
Title of Journal: Physical Review B
Volume: 73
Issue / Number: 20
Start Page: 205347-1
End Page: 205347-8
Document Type: Article
ID: 278238.0
 
Full text / Content available
Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): theory and experiment
Authors: Kratzer, P.; Liu, Q.K.K.; Acosta-Diaz, P.; Manzano, C.; Costantini, G.; Songmuang, R.; Rastelli, A.; Schmidt, O.G.; Kern, K.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physical Review B
Volume: 73
Sequence Number of Article: 205347
Document Type: Article
ID: 285488.0
Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots
Authors: Costantini, G.; Rastelli, A.; Manzano, C.; Acosta-Diaz, P.; Songmuang, R.; Katsaros, G.; Schmidt, O. G.; Kern, K.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physical Review Letters
Volume: 96
Sequence Number of Article: 226106
Document Type: Article
ID: 286854.0
Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems
Authors: Costantini, G.; Rastelli, A.; Manzano, C.; Acosta-Diaz, P.; Katsaros, G.; Songmuang, R.; Schmidt, O. G.; von Känel, H.; Kern, K.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Journal of Crystal Growth
Volume: 278
Issue / Number: 1-4
Start Page: 38
End Page: 45
Document Type: Article
ID: 244352.0
Entries: 1-4  
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