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Entries: 1-10  
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Band parameters and strain effects in ZnO and group-III nitrides
Authors: Yan, Qimin; Rinke, Patrick; Winkelnkemper, Momme; Qteish, A.; Bimberg, D.; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2011
Title of Journal: Semiconductor Science and Technology
Volume: 26
Issue / Number: 01
Sequence Number of Article: 014037
Document Type: Article
ID: 477152.0
Large-scale surface reconstruction energetics of Pt(100) and Au(100) by all-electron density functional theory
Authors: Havu, Paula; Blum, Volker; Havu, Ville; Rinke, Patrick; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2010-10-25
Title of Journal: Physical Review B
Volume: 82
Sequence Number of Article: 161418(R)
Document Type: Article
ID: 502392.0
 
Full text / Content available
First-principles modeling of localized d states with the GW@LDA+U approach
Authors: Jiang, Hong; Gomez-Abal, Ricardo I.; Rinke, Patrick; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2010-07-14
Title of Journal: Physical Review B
Volume: 82
Issue / Number: 4
Start Page: 045108-1
End Page: 045108-16
Document Type: Article
ID: 479454.0
 
Full text / Content available
Electronic band structure of zirconia and hafnia polymorphs from the GW perspective
Authors: Jiang, Hong; Gomez-Abal, Ricardo I.; Rinke, Patrick; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2010-02-24
Title of Journal: Physical Review B
Volume: 81
Issue / Number: 8
Start Page: 085119-1
End Page: 085119-9
Document Type: Article
ID: 459112.0
 
Full text / Content available
Role of strain in polarization switching in semipolar InGaN/GaN quantum wells
Authors: Yan, Qimin; Rinke, Patrick; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2010
Title of Journal: Applied Physics Letters
Volume: 97
Issue / Number: 18
Sequence Number of Article: 181102
Document Type: Article
ID: 534809.0
 
Full text / Content available
Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
Authors: Yan, Qimin; Rinke, Patrick; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2009-09-24
Title of Journal: Applied Physics Letters
Volume: 95
Issue / Number: 12
Start Page: 121111-1
End Page: 121111-3
Document Type: Article
ID: 438106.0
 
Full text / Content available
Controlling polarization at insulating surfaces: Quasiparticle calculations for molecules adsorbed on insulator films
Authors: Freysoldt, Christoph; Rinke, Patrick; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2009-07-31
Title of Journal: Physical Review Letters
Volume: 103
Issue / Number: 5
Start Page: 056803-1
End Page: 056803-4
Document Type: Article
ID: 432289.0
 
Full text / Content available
Exploring the random phase approximation: Application to CO adsorbed on Cu(111)
Authors: Ren, Xinguo; Rinke, Patrick; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2009-07-02
Title of Journal: Physical Review B
Volume: 80
Issue / Number: 4
Start Page: 045402-1
End Page: 045402-8
Document Type: Article
ID: 430610.0
 
Full text / Content available
Localized and itinerant states in lanthanide oxides united by GW @ LDA + U
Authors: Jiang, Hong; Gómez-Abal, Ricardo I.; Rinke, Patrick; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2009-03-24
Title of Journal: Physical Review Letters
Volume: 102
Issue / Number: 12
Start Page: 126403-1
End Page: 126403-4
Document Type: Article
ID: 403630.0
 
Full text / Content available
Defect formation energies without the band-gap problem: Combining density-functional theory and the GW approach for the silicon self-interstitial
Authors: Rinke, Patrick; Janotti, Anderson; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2009-01-14
Title of Journal: Physical Review Letters
Volume: 102
Issue / Number: 2
Start Page: 026402-1
End Page: 026402-4
Document Type: Article
ID: 395829.0
 
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Entries: 1-10  
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