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Entries: 1-4  
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Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): Theory and experiment
Authors: Kratzer, Peter; Liu, Q. K. K.; Acosta-Diaz, P.; Manzano, C.; Costantini, G.; Songmuang, R.; Rastelli, A.; Schmidt, O. G.; Kern, K.
Date of Publication (YYYY-MM-DD): 2006-05-31
Title of Journal: Physical Review B
Volume: 73
Issue / Number: 20
Start Page: 205347-1
End Page: 205347-8
Document Type: Article
ID: 278238.0
 
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Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots
Authors: Santoprete, Roberto; Koiller, Belita; Capaz, R. B.; Kratzer, Peter; Liu, Q. K. K.; Scheffler, Matthias
Date of Publication (YYYY-MM-DD): 2003-12-10
Title of Journal: Physical Review B
Volume: 68
Start Page: 235311-1
End Page: 235311-9
Document Type: Article
ID: 23324.0
Island dissolution during capping layer growth interruption
Authors: Wang, L. G.; Kratzer, Peter; Scheffler, Matthias; Liu, Q. K. K.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Applied Physics Letters A
Volume: 73
Start Page: 161
End Page: 165
Document Type: Article
ID: 2519.0
 
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Equilibrium shapes and energies of coherent strained InP islands
Authors: Liu, Q. K. K.; Moll, Nikolaj; Scheffler, Matthias; Pehlke, Eckard
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Physical Review B
Volume: 60
Start Page: 17008
End Page: 17015
Document Type: Article
ID: 2430.1
 
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Entries: 1-4  
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