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Entries: 1-9  
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Review of structure of bare and adsorbate-covered GaN(0001) surfaces
Authors: Feenstra, R. M.; Northrup, J. E.; Neugebauer, Jörg
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: MRS Internet Journal Nitride Semiconductor Research
Volume: 7
Issue / Number: 3
Start Page: 1
End Page: 27
Document Type: Article
ID: 8735.0
 
Full text / Content available
Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
Authors: Chen, H.; Feenstra, R. M.; Northrup, J. E.; Neugebauer, Jörg; Greve, D. W.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: MRS Internet Journal of Nitride Semiconductor Research
Volume: 6
Start Page: U1
End Page: U12
Document Type: Article
ID: 2489.0
Silicon on GaN(0001) and (0001) surfaces
Authors: Lee, C. D.; Feenstra, R. M.; da Rosa, A. L.; Neugebauer, Jörg; Northrup, J. E.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Journal of Vacuum Science and Technology B
Volume: 19
Start Page: 1619
End Page: 1625
Document Type: Article
ID: 2505.0
Surface morphology of GaN surfaces during molecular beam epitaxy
Authors: Feenstra, R. M.; Chen, H.; Ramachandran, V.; Lee, C. D.; Smith, A. R.; Northrup, J. E.; Zywietz, Tosja K.; Neugebauer, Jörg; Greve, D. W.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Surface Review and Letters
Volume: 7
Start Page: 601
End Page: 606
Document Type: Article
ID: 2465.0
Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
Authors: Chen, H.; Feenstra, R. M.; Northrup, J.; Zywietz, Tosja K.; Neugebauer, Jörg; Greve, D. W.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Journal of Vacuum Science and Technology B
Volume: 18
Start Page: 2284
End Page: 2289
Document Type: Article
ID: 2463.0
Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces
Authors: Chen, H.; Feenstra, R. M.; Northrup, J. E.; Zywietz, Tosja K.; Neugebauer, Jörg; Greve, D. W.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Physical Review Letters
Volume: 85
Start Page: 1902
End Page: 1905
Document Type: Article
ID: 2462.1
 
Full text / Content available
Structure of GaN(0001): The laterally contracted Ga bilayer model
Authors: Northrup, J.; Neugebauer, Jörg; Feenstra, R. M.; Smith, A. R.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Physical Review B
Volume: 61
Start Page: 9932
End Page: 9935
Document Type: Article
ID: 2475.1
 
Full text / Content available
GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations
Authors: Smith, A. R.; Feenstra, R. M.; Greve, D. W.; Shin, M.-S.; Skowronski, M.; Neugebauer, Jörg; Northrup, J. E.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Surface Science
Volume: 423
Start Page: 70
End Page: 84
Document Type: Article
ID: 2443.1
 
Full text / Content available
Reconstructions of the GaN(0001) surface
Authors: Smith, A. R.; Feenstra, R. M.; Greve, D. W.; Neugebauer, Jörg; Northrup, J. E.
Date of Publication (YYYY-MM-DD): 1997
Title of Journal: Physical Review Letters
Volume: 79
Start Page: 3934
End Page: 3937
Document Type: Article
ID: 2358.1
 
Full text / Content available
Entries: 1-9  
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