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Entries: 1-10  
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Magnetopolaron effect on shallow donors in GaN
Authors: Wysmołek, A.; Stępniewski, R.; Potemski, M.; Chwalisz-Pietka, B.; Pakula, K.; Baranowski, J. M.; Look, D. C.; Park, S. S.; Lee, K. Y.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physical Review B
Volume: 74
Issue / Number: 19
Sequence Number of Article: 195205
Document Type: Article
ID: 306010.0
Electronic structure of shallow impurities in GaN studied via bound exciton magnetooptics
Authors: Stępniewski, R.; Wysmołek, A.; Potemski, M.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: physica status solidi (a)
Volume: 201
Issue / Number: 2
Start Page: 181
End Page: 189
Document Type: Article
ID: 192764.0
Hole subbands and Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures
Authors: Ryczko, K.; Kubisa, M.; Bryja, L.; Misiewicz, J.; Stępniewski, R.; Byszewski, M.; Potemski, M.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Physica B
Volume: 346-347
Start Page: 451
End Page: 454
Document Type: Article
ID: 192896.0
Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1-xAlxAs/GaAs single heterojunction
Authors: Bryja, L.; Kubisa, M.; Ryczko, K.; Misiewicz, J.; Stępniewski, R.; Byszewski, M.; Potemski, M.; Reuter, D.; Wieck, A.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Physica B
Volume: 346-347
Start Page: 442
End Page: 445
Document Type: Article
ID: 192909.0
Reply to "Comment on 'Recombination of excitons bound to oxygen and silicon donors in freestanding GaN' "
Authors: Wysmołek, A.; Korona, K. P.; Stępniewski, R.; Baranowski, J. M.; Bloniarz, J.; Potemski, M.; Jones, R. L.; Look, D. C.; Kuhl, J.; Park, S. S.; Lee, S. K.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Physical Review B
Volume: 69
Issue / Number: 15
Sequence Number of Article: 157302
Document Type: Article
ID: 192934.0
The chemical vapour transport growth of ZnO single crystals
Authors: Mycielski, A.; Kowalczyk, L.; Szadkowski, A.; Chwalisz, B.; Wysmołek, A.; Stępniewski, R.; Baranowski, J. M.; Potemski, M.; Witowski, A.; Jakiela, R.; Barcza, A.; Witkowska, B.; Kaliszek, W.; Jedrzejczak, A.; Suchocki, A.; Lusakowska, E.; Kaminska, E.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Journal of Alloys and Compounds
Volume: 371
Issue / Number: 1-2
Start Page: 150
End Page: 152
Document Type: Article
ID: 192937.0
Emission from mesoscopic-size islands formed in a GaAs/A1As double layer structure
Authors: Wysmołek, A.; Chwalisz, B.; Potemski, M.; Stępniewski, R.; Babinski, A.; Raymond, S.; Thierry-Mieg, V.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Acta Physica Polonica A
Volume: 106
Start Page: 367
End Page: 381
Document Type: Article
ID: 213111.0
Dynamics of trapping on donors and relaxation of the B-exciton in GaN
Authors: Korona, K. P.; Wysmołek, A.; Stępniewski, R.; Potemski, M.; Kuhl, J.; Baranowski, J. M.; Martinez, G.; Grzegory, I.; Porowski, S.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: physica status solidi (b)
Volume: 235
Issue / Number: 1
Start Page: 31
End Page: 35
Document Type: Article
ID: 7465.0
Resonant interaction of LO phonons with excited donor states in GaN
Authors: Wysmołek, A.; Potemski, M.; Stępniewski, R.; Baranowski, J. M.; Look, D. C.; Lee, S. K.; Han, J. Y.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: physica status solidi (b)
Volume: 235
Issue / Number: 1
Start Page: 36
End Page: 39
Document Type: Article
ID: 7466.0
Fine structure of effective mass acceptors in gallium nitride
Authors: Stępniewski, R.; Wysmołek, A.; Potemski, M.; Pakuła, K.; Baranowski, J. M.; Grzegory, I.; Porowski, S.; Martinez, G.; Wyder, P.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Physical Review Letters
Volume: 91
Issue / Number: 22
Sequence Number of Article: 226404
Document Type: Article
ID: 64927.0
Entries: 1-10  
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