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Entries: 1-8  
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Carriers diffusion in GaAs/AlAs type II quantum well
Authors: Lesiak, A.; Chwalisz, B.; Wysmołek, A.; Potemski, M.; Stepniewski, R.; Thierry-Mieg, V.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Acta Physica Polonica A
Volume: 108
Issue / Number: 5
Start Page: 755
End Page: 760
Document Type: Article
ID: 250415.0
Dynamics of Ground and Excited States of Bound Excitons in Gallium Nitride
Authors: Korona, K. P.; Wysmołek, A.; Stepniewski, R.; Kuhl, J.; Look, D. C.; Lee, S. K.; Han, J. Y.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Journal of Luminescence
Volume: 112
Start Page: 30
End Page: 33
Document Type: Article
ID: 261331.0
Investigations of charged and neutral excitions at p-type GaAlAs/GaAs single heterojunctions in time resolved magneto-luminescence experiments
Authors: Bryja, L.; Kubisa, M.; Ryczko, K.; Misiewicz, J.; Stepniewski, R.; Byszewski, M.; Potemski, M.; Kneip, M.; Bayer, M.
Place of Publication: New York, USA
Publisher: American Institute of Physics
Date of Publication (YYYY-MM-DD): 2005
Name of Conference/Meeting: 27th International Conference on the Physics of Semiconductors
Title of Proceedings: Proceedings of the 27th International Conference on the Physics of Semiconductors
Start Page: 1158
End Page: 1159
Title of Series: AIP Conference Proceedings
Volume (in Series): 772
Document Type: Conference-Paper
ID: 286817.0
Magneto-luminescence of a single lateral island formed in the type II GaAs/AlAs quatum well
Authors: Chwalisz, B.; Wysmolek, A.; Stepniewski, R.; Babinski, A.; Potemski, M.; Thierry-Mieg, V.
Place of Publication: Singapore, Singapore
Publisher: World Scientific Publishing Co. Pte. Ltd.
Date of Publication (YYYY-MM-DD): 2005
Name of Conference/Meeting: 16th International Conference on High Magnetic Fields in Semiconductor Physics
Title of Proceedings: Proceedings of the16th International Conference on High Magnetic Fields in Semiconductor Physics
Start Page: 359
End Page: 359
Document Type: Conference-Paper
ID: 286835.0
Optical detection of a 2DEG in GaN/AlGaN structures: High magnetic field studies
Authors: Chwalisz, B.; Wysmolek, A.; Stepniewski, R.; Potemski, M.; Knap, W.; Baranowski, J.; Grandjean, N.; Massies, J.; Prystawko, P.; Grzegory, I.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: physica status solidi (c)
Volume: 1
Start Page: 193
End Page: 197
Document Type: Article
ID: 286742.0
Magneto-spectroscopy of two-electron transitions in homoepitaxial GaN
Authors: Wojdak, M.; Baranowski, J. M.; Wysmolek, A.; Pakula, K.; Stepniewski, R.; Potemski, M.; Grzegory, I.; Porowski, S.
Place of Publication: Warrendale, PA, USA
Publisher: Materials Research Society
Date of Publication (YYYY-MM-DD): 2002
Name of Conference/Meeting: Materials Research Society Fall Meeting
Title of Proceedings: Proceedings of GaN and Related Alloys
Sequence Number: 533
Title of Series: Materials Research Society Symposium Proceedings
Volume (in Series): 693
Document Type: Conference-Paper
ID: 286777.0
Ground and excited excitonic resonances in heteroepitaxial GaN layers: a magnetotopical study
Authors: Wysmolek, A.; Potemski, M.; Stepniewski, R.; Pakula, K.; Baranowski, J. M.; Martinez, G.; Wyder, P.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Japanese Journal of Applied Physics
Volume: 1002
Start Page: 583
End Page: 586
Document Type: Article
ID: 286723.0
Magneto-spectroscopy of donor bound excitons in homoepitaxial GaN
Authors: Wysmolek, A.; Sapega, V. F.; Ruf, T.; Cardona, M.; Potemski, M.; Wyder, P.; Stepniewski, R.; Pakula, K.; Baranowski, J. M.; Grzegory, I.; Porowski, S.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Japanese Journal of Applied Physics
Volume: 1002
Start Page: 579
End Page: 582
Document Type: Article
ID: 286724.0
Entries: 1-8  
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