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Low-Temperature Softening Due to Vacancy Orbital with Γ8 Quartet Ground State in Boron-Doped Floating Zone Silicon
Authors: Baba, S.; Akatsu, M.; Mitsumoto, K.; Komatsu, S.; Horie, K.; Nemoto, Y.; Yamada-Kaneta, H.; Goto, T.
Date of Publication (YYYY-MM-DD): 2013-08-06
Title of Journal: Journal of the Physical Society of Japan
Volume: 82
Issue / Number: 8
Start Page: 084604-1
End Page: 084604-12
Sequence Number of Article: 084604
Document Type: Article
ID: 670430.0
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