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High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon
Authors: Evans-Freeman, J. H.; Peaker, A. R.; Hawkins, I. D.; Kan, P. Y. Y.; Terry, J.; Rubaldo, L.; Ahmed, M.; Watts, S.; Dobaczewski, L.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Materials Science in Semiconductor Processing
Volume: 3
Start Page: 237
End Page: 241
Document Type: Article
ID: 181442.0
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