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Entries: 1-10  
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Robust 2D Topological Insulators in van der Waals Heterostructures
Authors: Kou, L.Z.; Wu, S.C.; Felser, C.; Frauenheim, T.; Chen, C.F.; Yan, B.H.
Date of Publication (YYYY-MM-DD): 2014-10
Title of Journal: ACS Nano
Volume: 8
Issue / Number: 10
Start Page: 10448
End Page: 10454
Document Type: Article
ID: 701896.0
Opening a band gap without breaking lattice symmetry: a new route toward robust graphene-based nanoelectronics
Authors: Kou, L.Z.; Hu, F.M.; Yan, B.H.; Frauenheim, T.; Chen, C.F.
Date of Publication (YYYY-MM-DD): 2014
Title of Journal: Nanoscale
Volume: 6
Issue / Number: 13
Start Page: 7474
End Page: 7479
Document Type: Article
ID: 701895.0
Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature
Authors: Kou, L. Z.; Yan, B. H.; Hu, F. M.; Wu, S. C.; Wehling, T. O.; Felser, C.; Chen, C. F.; Frauenheim, T.
Date of Publication (YYYY-MM-DD): 2013-12
Title of Journal: Nano Letters
Volume: 13
Issue / Number: 12
Start Page: 6251
End Page: 6255
Document Type: Article
ID: 677297.0
Computational Studies on Polymer Adhesion at the Surface of γ-Al2O3: I. The Adsorption of Adhesive Component Molecules from the Gas Phase
Authors: Knaup, J. M.; Köhler, C.; Frauenheim, T.; Blumenau, A. T.; Amkreutz, M.; Schiffels, P.; Schneider, B.; Hennemann, O.-D.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Journal of Physical Chemistry
Volume: B 110
Start Page: 20460
End Page: 20468
Document Type: Article
ID: 286132.0
The Modelling of Dislocations in Semiconductor Crystals
Authors: Blumenau, A. T.; Eberlein, T. A. G.; Jones, R.; Frauenheim, T.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2005-09-05
Name of Conference/Meeting: EUROMAT 2005
Place of Conference/Meeting: Prague, Czech Republic
Document Type: Talk at Event
ID: 286294.0
Calculating absorption shifts for retinal proteins: Computational challenges
Authors: Wanko, M.; Hoffmann, M.; Strodel, P.; Koslowski, A.; Thiel, Walter; Neese, Frank; Frauenheim, T.; Elstner, M.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Journal of Physical Chemistry B
Volume: 109
Issue / Number: 8
Start Page: 3606
End Page: 3615
Document Type: Article
ID: 255744.0
Calculating absorption shifts for retinal proteins: Computational challenges
Authors: Wanko, M.; Hoffmann, M.; Strodet, P.; Koslowski, A.; Thiel, W.; Neese, F.; Frauenheim, T.; Elstner, M.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Journal of Physical Chemistry B
Volume: 109
Issue / Number: 8
Start Page: 3606
End Page: 3615
Document Type: Article
ID: 265279.0
The effect of charge on kink migration at 90 degrees partial dislocations in SiC
Authors: Blumenau, A. T.; Eberlein, T. A. G.; Jones, R.; Öberg, S.; Frauenheim, T.; Briddon, P. R.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Physica Status Solidi (A)
Volume: 202
Issue / Number: 5
Start Page: 877
End Page: 882
Document Type: Article
ID: 286127.0
Modeling Fundamental Aspects of the Surface Chemistry of Oxides and their Interactions with Coupling Agents
Authors: Schiffels, P.; Amkreutz, M.; Blumenau, A. T.; Krüger, T.; Schneider, B.; Frauenheim, T.; Hennemann, O.-D.
Title of Book: Adhesion: Current Research and Applications
Start Page: 17
End Page: 32
Place of Publication: Weinheim
Publisher: Wiley – VCH
Date of Publication (YYYY-MM-DD): 2005
Document Type: InBook
ID: 286387.0
The effect of charge on Basal dislocations in silicon carbide
Authors: Blumenau, A. T.; Eberlein, T. A. G.; Jones, R.; Öberg, S.; Frauenheim, T.; Briddon, P. R.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2004-09-11
Name of Conference/Meeting: EDS 2004
Place of Conference/Meeting: Chernogolovka, Russia
Document Type: Talk at Event
ID: 286289.0
Entries: 1-10  
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