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Entries: 1-10  
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Silicon nanostructures for IR light emitters.
Authors: Kittler, M.; Arguirov, T.; Yu, X.; Jia, G.; Vyvenko, O. F.; Mchedlidze, T.; Reiche, M.; Sha, J.; Yang, D.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Materials Science & Engineering C
Volume: 27
Start Page: 1252
End Page: 1259
Document Type: Article
ID: 350522.0
Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.
Authors: Kittler, M.; Yu, X.; Mchedlidze, T.; Arguirov, T.; Vyvenko, O. F.; Seifert, W.; Reiche, M.; Wilhelm, T.; Seibt, M.; Voß, O.; Wolff, A.; Fritzsche, W.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Small
Volume: 3
Issue / Number: 6
Start Page: 964
End Page: 973
Document Type: Article
ID: 350542.0
Luminescence of dislocation network in directly bonded silicon wafers
Authors: Yu, X.; Kittler, M.; Vyvenko, O. F.; Seifert, W.; Arguirov, T.; Wilhelm, T.; Reiche, M.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Physica Status Solidi C
Volume: 4
Issue / Number: 8
Start Page: 3025
End Page: 3029
Document Type: Article
ID: 352458.0
Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding
Authors: Yu, X.; Vyvenko, O. F.; Kittler, M.; Seifert, W.; Mchedlidze, T.; Arguirov, T.; Reiche, M.
Date of Publication (YYYY-MM-DD): 2007
Title of Journal: Semiconductors
Volume: 41
Issue / Number: 4
Start Page: 458
End Page: 461
Document Type: Article
ID: 352459.0
1.5 ${\mu}$m emission from a silicon MOS-LED based on a dislocation
network
Authors: Kittler, M.; Reiche, M.; Yu, X.; Arguirov, T.; Seifert, W.; Vyvenko, O.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: IEDM Technical Digest
Start Page: 845
End Page: 848
Document Type: Article
ID: 312956.0
Dislocation-induced light emission
Authors: Reiche, M.; Kittler, M.; Wilhelm, T.; Arguirov, T.; Seifert, W.; Yu, X.; Tchedlidze, M.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: ECS Transactions
Volume: 3
Issue / Number: 6
Start Page: 311
End Page: 319
Document Type: Article
ID: 312799.0
Properties of dislocation networks formed by Si wafer direct bonding
Authors: Yu, X.; Arguirov, T.; Kittler, M.; Seifert, W.; Ratzke, M.; Reiche, M.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Materials Science in Semiconductor Processing
Volume: 9
Start Page: 96
End Page: 101
Document Type: Article
ID: 312790.0
Regular dislocation networks in silicon as a tool for novel device
applications
Authors: Kittler, M.; Reiche, M.; Arguirov, T.; Seifert, W.; Yu, X.; Tchedlidze, M.; Wilhelm, T.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: ECS Transactions
Volume: 3
Issue / Number: 4
Start Page: 429
End Page: 450
Document Type: Article
ID: 312828.0
Self-organized pattern formation of biomolecules at silicon surfaces:
Intended application of a dislocation network
Authors: Kittler, M.; Yu, X.; Vyvenko, O. F.; Birkholz, M.; Seifert, W.; Reiche, M.; Wilhelm, T.; Arguirov, T.; Wolff, A.; Fritzsche, W.; Seibt, M.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Materials Science & Engineering C
Volume: 26
Issue / Number: 5-7
Start Page: 902
End Page: 910
Document Type: Article
ID: 312787.0
Silicon-based light emitters
Authors: Kittler, M.; Reiche, M.; Arguirov, T.; Seifert, W.; Yu, X.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Physica Status Solidi A
Volume: 203
Issue / Number: 4
Start Page: 802
End Page: 809
Document Type: Article
ID: 312788.0
Entries: 1-10  
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