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Entries: 1-9  
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Hydrogen strorage in carbon nanotubes
Authors: Becher, M.; Haluska, M.; Hirscher, M.; Quintel, A.; Skakalova, V.; Dettlaff-Weglikovska, U.; Chen, X; Hulman, M.; Choi, Y.; Roth, S.; Meregalli, V.; Parrinello, M.; Ströbel, R.; Jörissen, L.; Kappes, M.; Fink, J.; Züttel, A.; Stepanek, I.; Bernier, P.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Comptes Rendus Physique
Volume: 4
Start Page: 1055
End Page: 1062
Document Type: Article
ID: 60396.0
Hydrogen storage in carbon nanotubes
Authors: Becher, M.; Haluska, M.; Hirscher, M.; Quintel, A.; Skákalová, V.; Dettlaff-Weglikowska, U.; Chen, X.; Hulman, M.; Choi, Y.; Roth, S.; Meregalli, V.; Parrinello, M.; Ströbel, R.; Jörissen, L.; Kappes, M. M.; Finke, J.; Züttel, A.; Stepanek, I.; Bernier, P.
Date of Publication (YYYY-MM-DD): 2003
Title of Journal: Comptes Rendus Physique
Volume: 4
Start Page: 1055
End Page: 1062
Document Type: Article
ID: 124475.0
An anomalous alloy: YxSi1-x
Authors: Meregalli, V.; Parrinello, M.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Solid State Communications
Volume: 117
Start Page: 441
End Page: 444
Document Type: Article
ID: 182606.0
Review of theoretical calculations of hydrogen storage in carbon-based materials
Authors: Meregalli, V.; Parrinello, M.
Date of Publication (YYYY-MM-DD): 2001
Title of Journal: Applied Physics A
Volume: 72
Start Page: 143
End Page: 146
Document Type: Article
ID: 182605.0
Electron-phonon coupling and properties of doped BaBiO3.
Authors: Meregalli, V.; Savrasov, S. Y.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Journal of Superconductivity
Volume: 12
Start Page: 185
End Page: 187
Document Type: Article
ID: 180924.0
Strain dependent gap nature of epitaxial β-FeSi2 in silicon by first principles calculations.
Authors: Miglio, L.; Meregalli, V.; Jepsen, O.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Applied Physics Letters
Volume: 75
Start Page: 385
End Page: 388
Document Type: Article
ID: 180925.0
Electronic origin of the stability trand in TiSi2 phases with Al or Mo layers.
Authors: Bònoli, F.; Iannuzzi, M.; Miglio, L.; Meregalli, V.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Applied Physics Letters
Volume: 73
Start Page: 1964
End Page: 1966
Document Type: Article
ID: 182884.0
Electron-phonon coupling and properties of doped BaBiO3.
Authors: Meregalli, V.; Savrasov, S. Y.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Physical Review B
Volume: 57
Start Page: 14453
End Page: 14469
Document Type: Article
ID: 182145.0
Theory of FeSi2 direct gap semiconductor on Si(100).
Authors: Miglio, L.; Meregalli, V.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Journal of Vacuum Science and Technology B
Volume: 16
Start Page: 1604
End Page: 1609
Document Type: Article
ID: 181983.0
Entries: 1-9  
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