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Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si
Authors: Karl, H.; Grosshans, I.; Wenzel, A.; Stritzker, B.; Claessen, R.; Strocov, V. N.; Cirlin, G. E.; Egorov, V. A.; Polyakov, N. K.; Samsonenko, Y. B.; Denisov, D. V.; Ustinov, V. M.; Alferov, Zh
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Nanotechnology
Volume: 13
Start Page: 631
End Page: 634
Document Type: Article
ID: 33419.0
Submonolayer Ge and InAs inclusions in a silicon matrix
Authors: Cirlin, G. E.; Egorov, V. A.; Polyakov, N. K.; Volovik, B. V.; Tsatsul'nikov, A. F.; Ustinov, V. M.; Ledentsov, N. N.; Alferov, Zh; Zakharov, N. D.; Werner, P.; Gösele, U.; Karl, H.; Wenzel, A.; Stritzker, B.; Claessen, R.; Strocov, V. N.
Date of Publication (YYYY-MM-DD): 2002
Title of Journal: Izvestiya Akademii Nauk Seriya Fizicheskaya
Volume: 66
Start Page: 165
End Page: 168
Document Type: Article
ID: 33374.0
Entries: 1-2  
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