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url: http://pubs.acs.org/doi/abs/10.1021/j100023a026
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url: http://dx.doi.org/10.1016/0013-4686(95)00071-L
Allongue, P., V. Bertagna, V. Kieling and H. Gerischer: Probing by in situ scanning tunneling microscopy the influence of an organic additive on Si etching in NaOH. In: Journal of Vacuum Science & Technology B 12, 3, 1539-1542 (1994).
url: http://dx.doi.org/10.1116/1.587281
Gerischer, H., P. Allongue and V. Costa Kieling: The mechanism of the anodic oxidation of silicon in acidic fluoride solutions revisited. In: Berichte der Bunsen-Gesellschaft fur Physikalische Chemie 97, 6, 753-756 (1993).
localid: LP494
Allongue, P., V. Costa Kieling and H.. Gerischer: Etching of silicon in NaOH solutions. II: Electrochemical studies of n-Si(111) and (100) and mechanism of the dissolution. In: Journal of the Electrochemical Society 140, 4, 1018-1026 (1993).
url: http://dx.doi.org/10.1149/1.2056190
Allongue, P., V. Costa Kieling and H.. Gerischer: Etching of silicon in NaOH solutions. I: In-situ STM investigation of n-Si(111). In: Journal of the Electrochemical Society 140, 4, 1009-1018 (1993).
url: http://dx.doi.org/10.1149/1.2056189
Allongue, P., H. Brune and H.. Gerischer: In-situ STM observations of the etching of n-Si(111) in NaOH solutions. In: Surface Science 275, 3, 414-423 (1992).
url: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVX-46TY0MK-12&_user=28741&_handle=V-WA-A-W-VW-MsSAYZW-UUA-U-AAADZBYDDW-AAACWAECDW-YDVAWVVA-VW-U&_fmt=summary&_coverDate=09%2F15%2F1992&_rdoc=25&_orig=browse&_srch=%23toc%235546%231992%23997249996%23342357!&_cdi=5546&view=c&_acct=C000003598&_version=1&_urlVersion=0&_userid=28741&md5=596864d6905bb72461250a8310ebbbcc
doi: 10.1016/0039-6028(92)90814-M
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